Abstract: A D/A converter capable of temporally controlling output of analog data during D/A conversion is provided. The digital to analog converter includes a ferroelectric non-volatile semiconductor memory. The ferroelectric non-volatile semiconductor memory includes a data line, a memory unit which has M memory cells, and M plate lines. Each of the memory cells includes a first electrode, a ferroelectric layer and a second electrode. The first electrode of the memory cells is shared in the memory unit and is connected to the data line. The second electrode of the mth memory cell is connected to the mth plate line. And the area of the ferroelectric layer of the memory cells varies among the memory cells.