Abstract: A gas distributor for a plasma apparatus includes: a body having a plurality of injection holes, the body being divided into a lower portion and an upper portion with respect to a center surface; and a body supporting unit connected to the lower portion.

Abstract: In one embodiment, a method of removing film materials on an edge area of a substrate in a plasma etching apparatus is disclosed. The apparatus includes a chamber, a substrate support, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, and an antenna disposed on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber. The method includes spraying a curtain gas to a space between the shield and the substrate, using a curtain gas passageway; and spraying a reaction gas to an area between a side surface of the shield and an inner sidewall of the chamber formed within the shield, using a reaction gas supply passageway.

Abstract: A method of fabricating a solar cell includes: forming a first electrode on a substrate; forming a first impurity-doped semiconductor layer on the first electrode; forming a first intrinsic semiconductor layer of amorphous silicon on the first impurity-doped semiconductor layer; forming a second impurity-doped semiconductor layer over the first impurity-doped semiconductor layer, forming a second electrode over the second impurity-doped semiconductor layer; and irradiating a first microwave to form a second intrinsic semiconductor layer of microcrystalline silicon by crystallizing the first intrinsic semiconductor layer.

Abstract: There is provided a system-in-package (SiP), which includes a substrate obtained by cutting a wafer for each unit system; one or more first electronic devices mounted on the substrate by a heat radiation plate; a plurality of interlayer dielectrics sequentially formed on the substrate; and one or more second electronic devices buried between or in the interlayer dielectrics on the substrate. A heat sink may be additionally attached to the bottom surface of the substrate. In this case, a thermal conduction path including heat pipes connecting the heat radiation plate on the substrate and the heat sink is formed. In the SiP, various types of devices are buried at a wafer level, so that a more integrated semiconductor device is implemented corresponding to demand for a fine pitch. Further, the heat radiation of a device required in high-speed operation and high heat generation is maximized due to the multi-stepped heat radiation structure, and thus the operation of the device is more stabilized.

Abstract: The invention relates to a micro-speaker with a second suspension made of highly resilient material installed inside of the speaker. The speaker is able to provide high level acoustic output with low distortion rate in a wide frequency range with a very small and slim structure and it may prevent a disconnection of a lead connecting the voice coil and the electrode. The speaker includes a yoke, a permanent magnet, a plate, a vibration plate integrated with a first suspension, a voice coil, a frame and a protector. The speaker further comprises a second suspension made of highly resilient material installed between the plate and the vibration plate, and is characterized in that the voice coil is attached to the lower surface of the second suspension and the vibration plate is attached to the upper surface of the second suspension and the vibration plate is attached to the upper surface of the second suspension and the outer periphery of the second suspension is fixed to the frame.