Abstract: A trench storage dynamic random access memory cell with vertical transfer device can be formed in a wafer having prepared shallow trench isolation. Vertical transfer device is built as the deep trenches are formed. Using square printing to form shallow trench isolation and deep trenches, allows for scaling of the cell to very small dimensions.
Type:
Grant
Filed:
May 28, 1998
Date of Patent:
May 1, 2001
Assignee:
International Business Machines Corporation
Inventors:
Toshiharu Furukawa, Mark C. Hakey, David V. Horak, William H. Ma, Jack A. Mandelman