Abstract: Ion-beam probes of the planar, screened, and multilayer types are shown and described. These probes can detect the arrival of energetic ions and, in the latter type, also detect the arrival of energetic neutral molecules. A specific improvement is the use of a multilayer collection surface behind an aperture to measure the angular distribution of the etching contributions of energetic ions and/or energetic neutral molecules. After use, this multilayer collection surface provides a permanent record of the measurement. The improvement is also suitable for the adverse thermal and ion-etching environment of an energetic ion beam. In one embodiment, the aperture size and distance from the collection surface are such that a theoretical analysis of etch depth behind a straight-edge mask can be used to analyze the experimental results. The etch contour can be accurately reproduced from the measurement of half-maximum half angle, as long as the assumed distribution is incorporated in the measurement process.
Type:
Grant
Filed:
August 30, 1995
Date of Patent:
August 11, 1998
Assignee:
Kaufman & Robinson, Inc.
Inventors:
Harold R. Kaufman, Raymond S. Robinson, James R. Kahn
Abstract: Closed-drift ion sources of the magnetic-layer and anode-layer types are shown and described, with both one-stage and two stage versions of the latter included. Specific improvements include the use of a magnetically permeable insert in the closed drift region together with an effectively single source of magnetic field to facilitate the generation of a well-defined and localized magnetic field while, at the same time, permitting the placement of that magnetic field source at a location well removed from the hot discharge region. Such a configuration is also well suited to the use of a permanent magnet as the magnetic field source. In one embodiment a baffle arrangement serves to distribute the ionizable gas uniformly circumferentially and decrease its pressure below the Paschen-law minimum before exposure to the anode potential.