Patents Represented by Attorney Hung Chang Lin
  • Patent number: 7466015
    Abstract: A supporting frame is used to solidly bridge to the two metallic contacts of a surface mount diode chip. Any bending or twisting stress between the two contacts is borne by the supporting frame instead of the diode chip. Otherwise the stress may damage the diode chip. wherein said supporting forms a cantilever over said first metallic contact and the overhanging end of the cantilever is glued to said second metallic contact.
    Type: Grant
    Filed: December 11, 2006
    Date of Patent: December 16, 2008
    Inventor: Jiahn-Chang Wu
  • Patent number: 6882331
    Abstract: A light emitting diode matrix array is used as the light source of a picture projection system. Each cell of the LED matrix array has an assembly of one or more red, green and blue LEDs with metal lead structures to individually energize these LEDs. The lights emitted from the LED assembly is transmitted through one or more programmable liquid crystal plate or digital micro-mirror device to control the light transmission, and then merged together for projection as a pixel onto a screen.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: April 19, 2005
    Inventor: Jiahn-Chang Wu
  • Patent number: 6289098
    Abstract: A message generation and automatic dialing system is used in conjunction with a telephone for a customer to receive product information and to place an order for the product or service. The product information such as product list and prices are prerecorded in a ROM and broadcast from a speaker, which is acoustically coupled to the telephone. The speaker then automatically generates dialing tones to connect the telephone to the customer service of the product company for the user to place an order of any product.
    Type: Grant
    Filed: July 18, 2000
    Date of Patent: September 11, 2001
    Assignee: Utron Technology Inc.
    Inventor: Hsu Wan-Lung
  • Patent number: 5124666
    Abstract: A CMOS second generation current conveyor (CCII) and its integrators suitable for MOS technology integrated circuit (IC) applications. Ladder filters based on CCII are realized. CMOS CCII-based circuits can be directly employed in single CCII biquad filters. Four configurations are proposed to synthesize various types of second-order transfer functions.
    Type: Grant
    Filed: March 4, 1991
    Date of Patent: June 23, 1992
    Assignee: Industrial Technology Research Institute
    Inventors: Shen-Iuan Liu, Jing-Shown Wu, Hen-Wai Tsao
  • Patent number: 5113143
    Abstract: A current mode chopper amplifier is used to convert low dc current flowing in a resistive element into ac for signal processing to eliminate drift and noise. The ac signal is then converted back to dc as output. The input circuit for the chopper is an operational amplifier driving a pass transistor and serving also as a voltage follower, which drives the resistive element. A polarizing voltage is applied to the input of the operational amplifier, and followed by the resistive element. The current in the resistive element flows through the pass transistor to the chopper, but not through the polarizing voltage source.
    Type: Grant
    Filed: April 8, 1991
    Date of Patent: May 12, 1992
    Assignee: University of Maryland
    Inventor: Sen-Jung Wei
  • Patent number: 5037766
    Abstract: A method of fabricating a double layered polisilicon film with oxygen diffusion for scaled down polysilicon thin film transistor/resistor. The double layered polysilicon film structure includes: a first heavily doped polysilicon layer, produced by Low Pressure Chemical Vapor Deposition (LPCVD) system at about 610 degrees Centigrade, is used as electrodes of resistor or source/drain electrodes of a transistor, and a second layer of polysilicon, deposited by LPCVD at the temperature about 560 degrees Centigrade, is used as a resistor layer or a channel layer of a transistor.Oxygen treatment is applied at low temperature after the first polysilicon layer is defined. The oxygen present at polysilicon grain boundary blocks the dopant diffusing from the first electrode polysilicon to the second polysilicon which is used as resistor region or a channel region of a transistor. Thus, the resistor can maintain high resistivity and the transistor can maintain low threshold voltage even when they are scaled down.
    Type: Grant
    Filed: January 17, 1990
    Date of Patent: August 6, 1991
    Assignee: Industrial Technology Research Institute
    Inventor: Ting S. Wang
  • Patent number: 4967197
    Abstract: A high resolution digital to analog conversion system using a medium resolution converter compensated for error correction. The errors of more significant bits are stored in a memory during correction mode and recalled during normal operation. The errors are evaluated by comparing the binary weighted currents of a sub-DAC with corresponding reference currents and stored in the memory. The comparing operation is exercised by sequential approximation method for fast execution and simpler circuitry.
    Type: Grant
    Filed: May 17, 1989
    Date of Patent: October 30, 1990
    Assignee: Industrial Technology Research Institute, R.O.C.
    Inventor: Yung-Chow Peng
  • Patent number: 4701937
    Abstract: A fixed pattern signal storage and replay system in which the silent periods of the signal are not stored but regenerated. During the silent periods of the signal, which is pulse code modulated, the decoder for the storage memory is inactivated.
    Type: Grant
    Filed: May 13, 1985
    Date of Patent: October 20, 1987
    Assignee: Industrial Technology Research Institute Republic of China
    Inventors: Shyue-Yun Wan, Jeng-Joung Guo, Cheng-Fung Lin