Abstract: A D/A conversion circuit in accordance with the present invention, which is provided with a switch swD, allows a writing operation of a voltage (a true gradation voltage) to be performed at a higher speed by first applying a first voltage (a voltage close to the true gradation voltage), which is supplied without passing through a resistor element, to an output line and then applying a second voltage (the true gradation voltage), which is supplied via the resistor element, to the output line. Thus, the present invention can provide a D/A conversion circuit capable of writing display data to liquid crystal cells with higher precision at higher speed, and a semiconductor device utilizing such a D/A conversion circuit.

Abstract: It is an object of the present invention to provide a novel material that can be used for an electron injecting material. In addition, it is an object of the present invention to provide a light-emitting element that is able to broaden choices for an electrode material. An aspect of the present invention is an electron injecting material represented by a general formula (2). In the general formula (2), R6 is selected from the group consisting of an alkyl group having 1 to 4 carbon atoms, an alkenyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 10 carbon atoms, where the alkenyl group and the aryl group may have a substituent.

Abstract: A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

Abstract: A semiconductor device includes a control circuit for carrying out gamma correction of a supplied signal, and a memory for storing data used in the gamma correction. The control circuit and the memory are constituted by TFTs, and are integrally formed on the same insulating substrate. A semiconductor display device includes a pixel region in which a plurality of TFTs are arranged in matrix; a driver for switching the plurality of TFTs; a picture signal supply source for supplying a picture signal; a control circuit for carrying out gamma correction of the picture signal; and a memory for storing data used in the gamma correction of the picture signal. The plurality of TFTs, the driver, the control circuit, and the memory are integrally formed on the same insulating substrate.

Abstract: An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate, a gate insulating film over the gate electrode, a first source or drain electrode over the gate insulating film, an island-shaped semiconductor film over the first source or drain electrode, and a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode. Further, the second source or drain electrode is in contact with the first source or drain electrode, and the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode. Moreover, the present invention relates to a manufacturing method of the semiconductor device.

Abstract: The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.

Abstract: The invention relates to an apparatus for rehabilitation treatment of patients with lower limb paralysis or physical strength weakening, and more particularly, to an apparatus and method for lower limb rehabilitation treatment and exercise. The apparatus and method allows a user to exercise both lower limbs separately, and which can detect changes in the angle of lower limb joints and the magnitude of weight loaded on lower limbs to determine the exercise condition, exercise intensity and motor ability of the respective lower limbs to provide corresponding feedback to the user, thereby enabling effective rehabilitation treatment.

Abstract: To provide thin-film transistor circuits used for a driving circuit that realizes a semiconductor display capable of producing an image with high resolution and high precision without image unevenness. TFTs with small channel widths are used to form an analog buffer which comprises a differential amplifier circuit and a current mirror circuit and which is used in a driving circuit of an active matrix semiconductor display. A plurality of such analog buffer circuits are connected in parallel to secure an analog buffer that has a sufficient current capacity.

Abstract: A non-threatening combination baton and spray dispenser that can be readily employed was a baton or as a dispenser without requiring complex re-orientation or concentrated aiming, including an expandable baton having a mounted connector coupling that facilitates connection to an end of an irritant spray dispenser disposed in axial alignment with the baton. The connector coupling supports a switch mechanism readily operable by the user's thumb while grasping the connector coupling to selectively dispense spray axially from the dispenser with the baton in either its retracted or expanded positions.

Abstract: It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.

Abstract: In a semiconductor device and a method of manufacturing the semiconductor device, the source wires 126 of a pixel portion 205 are formed of material having low resistance (representatively, aluminum, silver, copper). The source wires of a driving circuit are formed in the same process as the gate wires 162 of the pixel portion and a pixel electrode 163.

Abstract: An air handling system with an air intake device is provided. The air intake device includes first and second air/water separators having a baffle device positioned between the two separators to redirect the air flow from the first separator so that it is flowing generally longitudinally of the air intake device flow passage. A heater is provided to heat flowing air and snow for collection on a second separator having a foraminous device for subsequent collection and drainage from the air intake device.

Abstract: An EL element which is thicker and lower-voltage drive without doping acceptor or donor than the conventional one. An EL element in which an electroluminescent film 103 containing an organic compound which can provide electroluminescent, a floating electrode 104, an electron transport supporting layer 105 and a cathode 102 are in order laminated on an anode 101. A film thickness of the electroluminescent film 103 is on the order of a conventional film thickness (on the order of approximately 100 nm), and the electron transport supporting layer 105 may also have a film thickness on the order of the electroluminescent film 103. The EL element can be driven at lower voltage than the conventional one by introducing a hole blocking material into an electron transport supporting layer.

Abstract: It is an object of the present invention to provide a light-emitting element having a structure in which the drive voltage is relatively low. Further, it is an object of the invention to provide a highly reliable light emitting device by alleviating the stress to the light emitting layer. Further, it is another object of the invention to provide a light emitting element having a structure in which increase in the drive voltage over time is small. It is an object of the present invention to provide a display device in which the drive voltage is low and increase in the drive voltage over time is small and which can withstand long-term use.

Abstract: By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Abstract: It is an object to provide a light emitting element that has a different structure from that of a conventional light emitting element and includes a substance having a novel structure. It is also an object to provide a light emitting device having the light emitting element. In the view of the objects described above, the present invention provides a light emitting element including a layer containing a triazine derivative represented by the general formula (1) and a metal oxide that is an inorganic compound, provided between a pair of electrodes. Further, the present invention provides a light emitting device that has the light emitting element.

Abstract: In a manufacturing process of a semiconductor device, a manufacturing technique and a manufacturing apparatus of a semiconductor device which simplify a lithography step using a photoresist is provided, so that the manufacturing cost is reduced, and the throughput is improved. An irradiated object, in which a light absorbing layer and an insulating layer are stacked over a substrate, is irradiated with a multi-mode laser beam and a single-mode laser beam so that both the laser beams overlap with each other, and an opening is formed by ablation in part of the irradiated object the irradiation of which is performed so that both the laser beams overlap with each other.