Abstract: An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is used to determine if a potential defect exists within one of the vias or metal segments comprising the scan chain.

Abstract: A method for laying out process dummy cells in relationship to inside memory cells of a memory array includes (a) calculating an initial process performance parameter for the memory array; (b) changing dummy cell layout configuration for a layer electrically connected to inside cells; (c) applying lithographic simulation and yield model for both the inside memory cells and the changed layout configuration process dummy cells; and (d) repeating steps (b) and (c) until yield is maximized. Checks may be performed to ensure that there is enough room to make the change and that there is no significant adverse effect to neighboring circuits. The process performance parameter may be yield or a process window for the inside memory cells.

Abstract: A system for managing the entry of a wafer carrier into a stocker in a semiconductor manufacturing operation is disclosed. The system comprises a stocker that accepts wafer carriers via one or more input ports. The present invention provides a means for detecting the presence of a wafer carrier at the input port, means for identifying the type of the wafer carrier, and means for executing an action sequence if the stocker is not compatible with those wafer carriers. Upon detecting an erroneous condition, an action sequence is executed which may include prevention entry of the wafer carrier, and notifying an operator.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: A method of detecting low-probability defects in large transistor arrays (such as large arrays of SRAM cells), where the defects manifest themselves as asymmetrical leakage in a transistor (such as a pulldown nFET in an SRAM cell). These defects are detected by creating one or more test arrays, identical in all regards to the large transistor arrays up until the contact and metallization layers. Leakage is measured by applying an appropriate off-state voltage (e.g., 0V) by a common connection to all of the gates of the transistors in the test array, then measuring the aggregate drain/source leakage current, both forward and reverse (e.g., first grounded source and positively biased drain, then grounded drain and positively biased source) comparing the difference between the two leakage current measurements.

Abstract: A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.

Abstract: A method for laying out process dummy cells in relationship to inside memory cells of a memory array includes (a) calculating an initial process performance parameter for the memory array; (b) changing dummy cell layout configuration for a layer electrically connected to inside cells; (c) applying lithographic simulation and yield model for both the inside memory cells and the changed layout configuration process dummy cells; and (d) repeating steps (b) and (c) until yield is maximized. Checks may be performed to ensure that there is enough room to make the change and that there is no significant adverse effect to neighboring circuits. The process performance parameter may be yield or a process window for the inside memory cells.

Abstract: Measurement circuit components are included in an integrated circuit fabricated on a semiconductor substrate. A method is provided for controlling the speed of a cooling fan provided to cool an integrated circuit in which includes the steps of receiving a voltage from a thermal diode, addressing a table of digital temperatures by incrementing the address of the table entries every clock cycle of a circuit clock, converting the addressed data to a second voltage representing temperature, comparing the first voltage to the second voltage, providing a resulting temperature when both the first and second voltages are equal, and adjusting the fan speed accordingly.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: A circuit and method are provided for correcting binary values in a data word having N bit positions where the circuit includes several assemblies, each for a unique data word bit position, where each assembly includes a first logic circuit connected to its unique data word bid and an adjacent data word bit to provide a first output bit and a second logic circuit connected to receive the first output bit and a different adjacent bit of the data word to provide a second output bit representing a corrected value of the unique bit.

Abstract: Methods and arrangements to determine phase adjustments for a sampling clock of a clock and data recovery (CDR) loop based upon subsets of data samples, or values, derived from an incoming data signal are disclosed. In particular, embodiments extend the CDR loop by slowing the clock rate with respect to the sampling clock. For instance, the slower clock rate may be implemented by dividing the frequency of the sampling clock by a number such as 128, slowing a sampling clock frequency designed to handle multiple gigabits per second (Gbps) to a frequency of less than one kilohertz (Khz). In addition to the reduced power consumption realized by operating at a lower frequency, the slower clock rate allows components of the CDR loop circuitry to operate a lower operating voltage reducing power consumption by the CDR loop even more.

Abstract: A process including forming a silicon layer over a semiconductor wafer having features thereon and then selectively ion implanting in the silicon layer to form ion implanted regions. The step of selectively ion implanting is repeated as many times as necessary to obtain a predetermined number and density of features. Thereafter, the silicon layer is etched to form openings in the silicon layer that were formerly occupied by the ion implanted regions. The opened areas in the silicon layer form a mask for further processing of the semiconductor wafer.

Abstract: A system and method for failure analysis of devices on a semiconductor wafer is disclosed. The present invention comprises the use of an inline focused ion beam milling tool to perform milling and image capturing of cross sections of a desired inspection point. The inspection points are located by identifying at least one fiducial that corresponds to an X-Y offset from the desired inspection point. The fiducials are recognized by a computer vision system. By automating the inspection process, the time required to perform the inspections is greatly reduced.

Abstract: An article supports a workpiece during thermal processing. At least three elongated support members, e.g., support pins, extend upwardly from an element such as support arms for supporting the workpiece. Each of the support members includes a first portion adjacent to the workpiece. A second portion extends downwardly from the first portion. The first portion can have a thermal response faster than the thermal response of the workpiece and the second portion can have a slower thermal response. A removable element may be mounted to the support member for adjusting the thermal response of the support member. With removable elements, the support members can be adjusted to cause no net transfer of heat to or from the workpiece.

Abstract: Optical cubes and optical cube assemblies for directing optical beams are provided. The optical cubes are optically transparent modules that can be adapted to reflect, transmit, and/or partially reflect and transmit optical beams. The optical cubes may include bi-direction or multi-direction beam directing elements for directing optical beams. The optical cube assemblies may include flexible chip assemblies attached to optical cubes. The chip assemblies may include vertical cavity surface-emitting lasers for emitting optical beams or receivers for receiving optical beams mounted on a flexible and electrical interconnect mounting assembly.

Abstract: An apparatus is provided for transmitting data signals and additional information signals having partially overlapping frequency bands simultaneously within a wire based communication system over the same wired medium using a spread spectrum technique for modulating the additional information signals.

Abstract: A circuit and a method for regulating a voltage supply where the method includes the steps of concurrently measuring temperature, IR drop and frequency response within the circuit, adjusting voltage supplied to the circuit in response to the measured temperature, IR drop and frequency response, and determining a correction value based on the variance of the measured frequency response from an expected frequency response and providing a correction for subsequent predetermined frequency response values. The frequency response measurement is dependent upon the constant bandgap voltage source which may very according to temperature. Upon a determination that corrections may be required for the bandgap voltage source to compensate for temperature variations, the measurement process which uses the bandgap voltage source can be altered to compensate for the temperature variations.

Abstract: An integrated circuit is provided including a narrow gate stack having a width less than or equal to 65 nm, including a silicide region comprising Pt segregated in a region of the silicide away from the top surface of the silicide and towards an lower portion defined by a pulldown height of spacers on the sidewalls of the gate conductor. In a preferred embodiment, the spacers are pulled down prior to formation of the silicide. The silicide is first formed by a formation anneal, at a temperature in the range 250° C. to 450° C. Subsequently, a segregation anneal at a temperature in the range 450° C. to 550° C. The distribution of the Pt along the vertical length of the silicide layer has a peak Pt concentration within the segregated region, and the segregated Pt region has a width at half the peak Pt concentration that is less than 50% of the distance between the top surface of the silicide layer and the pulldown spacer height.

Abstract: A circuit and method are provided for storing a data word in a latch and determining the number of consecutive equal value bits within the data word. The data word consists of bits stored in unique bit positions and having a least significant bit position and a most significant bit position. The data word is examined to determine the number of consecutive bits having the same numeric value. The invention first corrects for any single bit anomaly within the consecutive equal value sequence, counts the number of consecutive bits having this equal value using logic that examines only every other bit position of the stored data word and provides a numeric value representing this number of consecutive equal value bits.

Abstract: A method is provided of fabricating complementary stressed semiconductor devices, e.g., an NFET having a tensile stressed channel and a PFET having a compressive stressed channel. In such method, a first semiconductor region having a lattice constant larger than silicon can be epitaxially grown on an underlying semiconductor region of a substrate. The first semiconductor region can be grown laterally adjacent to a second semiconductor region which has a lattice constant smaller than that of silicon. Layers consisting essentially of silicon can be grown epitaxially onto exposed major surfaces of the first and second semiconductor regions after which gates can be formed which overlie the epitaxially grown silicon layers. Portions of the first and second semiconductor regions adjacent to the gates can be removed to form recesses. Regions consisting essentially of silicon can be grown within the recesses to form embedded silicon regions. Source and drain regions then can be formed in the embedded silicon regions.