Patents Represented by Attorney Intellectual Property Law Office
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Patent number: 8232555Abstract: It is an object of the present invention to provide a device suitable for new usage by making use of a semiconductor device such as an RFID tag in terms of the capability to transmit and receive data without being contacted therewith, to decrease a burden on a user, and to improve convenience. A semiconductor device is provided to have an arithmetic processing circuit including a transistor, a conductive layer serving as an antenna, a detecting unit having a means for detecting physical quantity or chemical quantity, and a storage unit for storing data detected by the detecting unit, and to cover the arithmetic processing circuit, the conductive layer, the detecting unit, and the storage unit with a protective layer. In addition, diverse information can be monitored and controlled by providing such a semiconductor device for human beings, animals and plants, or the like without being contacted therewith.Type: GrantFiled: January 26, 2006Date of Patent: July 31, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yumiko Noda, Yasuyuki Arai, Yasuko Watanabe, Yoshitaka Moriya, Shunpei Yamazaki
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Patent number: 8227982Abstract: An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound.Type: GrantFiled: July 19, 2006Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuji Iwaki, Junichiro Sakata, Hisao Ikeda, Tomoya Aoyama, Takaaki Nagata, Takahiro Kawakami, Satoshi Seo, Ryoji Nomura
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Patent number: 8227802Abstract: It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.Type: GrantFiled: July 30, 2010Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroko Abe, Yuji Iwaki, Mikio Yukawa, Shunpei Yamazaki, Yasuyuki Arai, Yasuko Watanabe, Yoshitaka Moriya
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Patent number: 8228454Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.Type: GrantFiled: March 10, 2010Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno
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Patent number: 8227886Abstract: An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface.Type: GrantFiled: January 23, 2009Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Takahashi, Yohei Monma, Daiki Yamada, Takahiro Iguchi, Kazuo Nishi
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Patent number: 8228642Abstract: A dual stage actuator (DSA) suspension has a single microactuator such as a PZT element on one side of central longitudinal axis of the suspension, and a pseudo symmetry structure formed or affixed on the other side of the central longitudinal axis opposite the PZT. The pseudo symmetry structure has mass and stiffness that mirrors the PZT, thus keeping the suspension mechanically balanced and symmetric about the longitudinal axis for improved suspension performance especially in a shock environment.Type: GrantFiled: February 16, 2010Date of Patent: July 24, 2012Assignee: Magnecomp CorporationInventors: Peter Hahn, Wei Keat Chai, Kuen Chee Ee
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Patent number: 8227863Abstract: A semiconductor layer having a channel formation region provided between a pair of impurity regions spaced from each other is provided, and a first insulating layer a floating gate, a second insulating layer, and a control gate are provided above the semiconductor layer. The semiconductor material forming the floating gate preferably has a band gap smaller than that of the semiconductor layer. The band gap of a channel formation region in the semiconductor material forming the floating gate is preferably smaller than that of the semiconductor layer by 0.1 eV or more.Type: GrantFiled: March 20, 2007Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yoshinobu Asami, Tamae Takano, Makoto Furuno
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Patent number: 8227600Abstract: It is an object of the present invention to provide a substance capable of emitting phosphorescence. In addition, it is an object of the present invention to provide a light-emitting element that is excellent in chromaticity. One aspect of the present invention is an organometallic complex having a structure represented by a general formula (1). In the general formula (1), R1 to R4 are each any one of hydrogen, a halogen element, an acyl group, an alkyl group, an alkoxyl group, an aryl group, a cyano group, and a heterocyclic group. In addition, R5 to R13 are each any one of hydrogen, an acyl group, an alkyl group, an alkoxyl group, an aryl group, a heterocyclic group, and an electron-withdrawing group. An organometallic complex having such a structure can emit phosphorescence with higher emission intensity.Type: GrantFiled: April 14, 2011Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hideko Inoue, Satoko Shitagaki, Satoshi Seo
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Patent number: 8227278Abstract: The present invention provides a method for manufacturing a thin film transistor with small leakage current and high switching characteristics. In a method for manufacturing a thin film transistor, a back channel portion is formed in the thin film transistor by conducting etching using a resist mask, the resist mask is removed by removal or the like, and a superficial part of the back channel portion is further etched. Through the steps, components of chemical solution used for the removal, residues of the resist mask, and the like which exist at the superficial part of the back channel portion can be removed and leakage current can be reduced. The further etching step of the back channel portion is preferably conducted by dry etching using an N2 gas or a CF4 gas with bias not applied.Type: GrantFiled: August 21, 2009Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shinya Sasagawa, Akihiro Ishizuka, Shigeki Komori
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Patent number: 8228477Abstract: In a liquid crystal display device of an IPS system, to realize reduction of manufacturing cost and improvement of yield by decreasing the number of steps for manufacturing a TFT. A channel etch type bottom gate TFT structure, where patterning of a source region and a drain region and patterning of a source wiring and a pixel electrode are carried out by the same photomask.Type: GrantFiled: July 27, 2011Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yoshiharu Hirakata
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Patent number: 8228638Abstract: A load beam having a bent rail, a suspension that includes the load beam, and a related method for manufacturing a load beam. The method includes providing the load beam before the bent rail is formed, and coining the load beam at a location where the bend will occur in the rail.Type: GrantFiled: October 22, 2010Date of Patent: July 24, 2012Assignee: Magnecomp CorporationInventor: Leroy Dwayne Wielenga
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Patent number: 8227851Abstract: It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.Type: GrantFiled: November 23, 2010Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tomoyuki Aoki, Koji Dairiki, Yuugo Goto
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Patent number: 8230101Abstract: Transfer control means (41) transfers part of held digital contents in an internal storage device (51) to a network storage device (57). List information presentation means (42) returns list information which makes the digital contents stored in the internal storage device (51) and the network storage device (57) as the held digital contents in response to a list presentation request for the held digital contents. Upon reception of a data transmission request, search means (43) searches where the held digital contents are currently stored. If the result of the search shows the network storage device (57), content data transmission processing means (44) allows the stream-delivery of the data from the network storage device (57) to a network player (56). There is provided a server device for media (40) capable of maintaining the convenience of playback in a network player, while properly dealing with the large total size of held digital contents.Type: GrantFiled: March 2, 2007Date of Patent: July 24, 2012Assignee: Kabushiki Kaisha KenwoodInventors: Satoru Sekiguchi, Yoshio Sonoda, Isao Nakamura, Masamichi Furukawa, Yoshihisa Mashita, Tomoaki Yoshida, Masahito Watanabe
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Patent number: 8227097Abstract: One feature of the present invention is to provide a buffer layer made of a composite material for a light emitting element including aromatic hydrocarbon containing at least one vinyl skeleton and metal oxide in part of a light emitting substance containing layer, in the light emitting element formed by interposing the light emitting substance containing layer between a pair of electrodes. The composite material for a light emitting element for forming the buffer layer of the present invention has high conductivity and is superior in transparency.Type: GrantFiled: October 26, 2011Date of Patent: July 24, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takahiro Kawakami, Tomoya Aoyama, Junichiro Sakata, Hisao Ikeda, Satoshi Seo, Yuji Iwaki
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Patent number: 8222116Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.Type: GrantFiled: February 14, 2007Date of Patent: July 17, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuhiro Jinbo, Masafumi Morisue, Hajime Kimura, Shunpei Yamazaki
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Patent number: 8222735Abstract: With respect to a semiconductor device which communicates data by wireless communication, an object of the present invention is to improve sensitivity of an antenna and to protect a chip from noise without increasing the size of the device. A coiled antenna and a semiconductor integrated circuit which is electrically connected to the coiled antenna are included. The semiconductor integrated circuit is arranged so as to overlap with the coiled antenna. In this manner, arrangement of the coiled antenna and the semiconductor integrated circuit in the semiconductor device is devised, so that sensitivity of the antenna can be improved and power enough to operate the semiconductor integrated circuit can be obtained without increasing the size of the device.Type: GrantFiled: October 12, 2006Date of Patent: July 17, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Yutaka Shionoiri
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Patent number: 8222696Abstract: An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.Type: GrantFiled: April 21, 2009Date of Patent: July 17, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hisashi Ohtani, Jun Koyama, Takeshi Fukunaga
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Patent number: 8223531Abstract: The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.Type: GrantFiled: June 2, 2011Date of Patent: July 17, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryoji Nomura, Hiroko Abe, Yuji Iwaki, Shunpei Yamazaki
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Patent number: 8222092Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.Type: GrantFiled: December 23, 2009Date of Patent: July 17, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichiro Sakata, Jun Koyama
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Patent number: 8223460Abstract: A structure for a load beam used in hard disk drive devices includes an asymmetric structure. The load beam exhibits longitudinal asymmetry (i.e., is asymmetric along its long axis) in regard to the weight distribution, but has a center of mass that lies along its longitudinal axis due to the provisioning of counterbalancing features, such as the addition of material, the removal of material, or a combination of adding material and removing material, or the use of an asymmetrical damping layer.Type: GrantFiled: February 20, 2009Date of Patent: July 17, 2012Assignee: Magnecomp CorporationInventors: Visit Thaveeprungsriporn, Khampon Sittipongpanich, Christopher Schreiber