Abstract: Actuator controller comprising a body (12) with an inlet port (14) coupled to a source of pressurized fluid and in flow communication with primary and secondary spool bores (16, 20); primary and secondary spools (60, 62); first and second cross flow ports (48, 52) communicating said primary and secondary spool bores, compression and expansion outlet ports (53, 54) for applying pressurized fluid to a return-biased actuator (110); and a venting outlet port (23); wherein return action of the working piston of the actuator is facilitated with aid of pressurized fluid already gained in the system.

Abstract: An optical crossbar switch for optically coupling optic fibers comprising: at least one first fiber (21) and a plurality of second fibers (22); a moveable fiber-end carriage (41) coupled to an end of the at least one first fiber and constrained to move along a predetermined trajectory; at least one moveable slack-control carriage (42) coupled to the body of the at least one first fiber and constrained to move along a predetermined trajectory; and at least one moving device (70, 80) controllable to move the carriages; wherein to optically couple a first fiber of the at least one first fiber to a second fiber of the plurality of second fibers, the at least one moving device moves the fiber-end carriage of the first fiber along its trajectory to a position at which the end of the first fiber is optically coupled to an end of the second fiber and moves the at least one slack-control carriage to take up slack in the first fiber generated by movement of its fiber-end carriage.

Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.