Patents Represented by Attorney, Agent or Law Firm International Property Solutions, Incorporated
  • &agr;-WO3-gate ISFET devices and method of making the same
    Patent number: 6740911
    Abstract: Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.
    Type: Grant
    Filed: March 23, 2000
    Date of Patent: May 25, 2004
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung Chuan Chou, Jung Lung Chiang