Patents Represented by Attorney Isabelle McAndrews

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  • Method for forming a walled-emitter transistor
    Patent number: 5846868
    Abstract: An embodiment of the present invention is a process for semiconductor device having a silicon substrate. The process comprises positioning at least one field implant mask and field implanting a silicon substrate around a bipolar active region in a substrate such that boron atoms are blocked out of an active region, and only the field region surrounding the active area is implanted, the implanting such that a predetermined layout area of a semiconductor device does not need to be increased to compensate for a BV.sub.bso problem.
    Type: Grant
    Filed: May 31, 1995
    Date of Patent: December 8, 1998
    Assignee: Integrated Device Technology, Inc.
    Inventors: Chuen-Der Lien, Kyle Wendell Terrill