Abstract: The system and method disclosed herein are for use in data processing apparatus which is operated as a paging machine and wherein a program is considered a page reference string. The system and method effect the determination of the minimum memory capacities for the pages of the string. The data processing apparatus contains a first list which is a list of the names of the pages of the program and an integer associated with each page name, the integers each having one of the different discrete values of 1 to n wherein n is equal to the number of the pages in the program, the value of an integer associated with a page name being in accordance with the aforementioned LRU criterion. The novel system includes a second list and a method for utilization of such novel second list, this second list being an ordered sequence of addresses having the values of 1 to n, there being at each address an integer associated with a given page.

Abstract: There are described herein organic electronic devices of the acceptor-donor (A-D), acceptor-donor-acceptor (A-D-A), donor-acceptor-donor (D-A-D), acceptor-donor-acceptor-donor (A-D-A-D), types analogous to the p-n, p-n-p, n-p-n and p-n-p-n types in typical semiconductor devices. The A-D device suitably comprises a support or substrate upon which there is provided a layer of a conductive metal. On this metallic layer, there is provided in a thickness of about 25 to 50 Angstroms, a barrier layer organic compound. On the latter compound, there is provided a deposited metal conductor, the metal depositing suitably being effected by a technique such as vapor deposition. The A-D-A and D-A-D devices comprise a semiconductor or metallic body, on each surface of which there is provided in about a 25 to 50 Angstrom thickness, the aforementioned barrier layer compound. On each compound layer there is deposited a metal conductor. The barrier layer compound suitably is one whose molecules consist of two nonsymmetric, i.e.