Patents Represented by Attorney Ivester Ivester

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  • Silicon nitride for application as the gate dielectric in MOS devices
    Patent number: 5264724
    Abstract: A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.
    Type: Grant
    Filed: May 29, 1990
    Date of Patent: November 23, 1993
    Assignee: The University of Arkansas
    Inventors: William D. Brown, Muhammad A. Khaliq