Abstract: A method of making a large single crystal thin film not dependent upon the size or temperature resistance of the substrate crystal by first depositing an amorphous film of the crystalline material to be produced followed by heating of the amorphous film in such a manner that nucleation of epitaxial grains is propagated through the amorphous film whereby a single crystal thin film is produced.
Type:
Grant
Filed:
February 26, 1975
Date of Patent:
September 6, 1977
Assignee:
International Business Machines Corporation
Inventors:
Praveen Chaudhari, Jerome John Cuomo, John Wauchope Matthews