Patents Represented by Attorney, Agent or Law Firm J.C. Pantents
  • Etching method for doped polysilicon layer
    Patent number: 6274503
    Abstract: A method for etching a doped polysilicon layer. A first doped polysilicon layer of a first conductive type and a second doped polysilicon layer of a second conductive type are formed. An etching process is performed to pattern the first doped polysilicon layer and the second doped polysilicon layer. The etching process includes a first main etching step and a second main etching step. The etching pressure of the first main etching step is lower than the etching pressure of the second main etching step.
    Type: Grant
    Filed: February 1, 1999
    Date of Patent: August 14, 2001
    Assignee: United Microelectronics Corp.
    Inventor: Chi-Kuo Hsieh