Abstract: A method is provided for accelerating and improving the recovery of GaAs solar cells from the damage which they experience in space under high energy particle irradiation scuh as electrons, protons and neutrons. The method comprises combining thermal annealing with injection annealing. Injection annealing is the recovery from radiation damage resulting from minority carrier injection into the damaged semiconductor, nonradiative minority carrier combination of the injected minority carriers, transfer of the recombination energy to the crystal lattice and utilization of this energy to remove the defects caused by the high energy particle irradiation. The combined annealing of this invention is implemented by heating the solar cells to a moderate temperature (on the order of about 200.degree. C. to 300.degree. C.