Abstract: A combined row decoder and level translator powered by an on-chip high voltage supply results in an efficient layout, area savings and elimination of the global precharge signal resulting in additional area and power savings. In addition, power from the high voltage supply is consumed only by the level translator and wordline driver of the selected decoder resulting in additional power savings.
Abstract: A synchronous random access memory is arranged to be responsive directly to a system clock signal for operating synchronously with the associated microprocessor. The synchronous random access memory is further arranged to either write-in or read out data in a synchronous burst operation or synchronous wrap operation in addition to synchronous random access operations. The synchronous random access memory device may be fabricated as a dynamic storage device or as a static storage device.
Type:
Grant
Filed:
June 7, 1995
Date of Patent:
September 15, 1998
Assignee:
Texas Instruments Incorporated
Inventors:
Wilbur Christian Vogley, Anthony Michael Balistreri, Karl M. Guttag, Steven D. Krueger, Duy-Loan T. Le, Joseph H. Neal, Kenneth A. Poteet, Joseph P. Hartigan, Roger D. Norwood
Abstract: A circuit is designed with a decoder circuit (10), responsive to a first input signal (81) having a first voltage range, for producing a first output signal. An output circuit (11), responsive to the first output signal, produces a second output signal (26) having a second voltage range. The second voltage range includes a voltage less than a least voltage of the first voltage range and a voltage greater than a greatest voltage of the first voltage range.
Abstract: In a dynamic random access memory, the sense amplifiers associated with the storage cells have the direct sense circuitry (MNEW, MNWE.sub.--, MNRD, MNRD.sub.--) included therewith to minimize the effects of parasitic impedance. In addition, the Y-select circuits (MNYS, MNYS.sub.--) are combined with the read/write enable circuits (MNWE, MNWE.sub.--, MNRD, MNRD.sub.--) to eliminate a transistor pair, thereby reducing the required layout area. By locating the Y-select (MNYS, MNYS.sub.--) circuits between the sense amplifier MNWE, MNWE.sub.--, MNRD, MNRD.sub.--) and the local input/output lines (LIO, LIO.sub.--), the WRITE-ENABLE and the READ-ENABLE signals can be combined in a single signal.