Patents Represented by Attorney J. M. Trygg

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  • Orthogonal bipolar transistor
    Patent number: 4792837
    Abstract: An orthogonal bipolar transistor structure is disclosed which is particularly suitable for formation in relatively thin epitaxial layers on insulating substrates. The emitter of the transistor is disposed directly over the base region while a collector region may be arranged on one side of or surrounding the base region. Alternatively, the collector region may be a pair of regions disposed laterally on opposite sides of the base region.
    Type: Grant
    Filed: February 26, 1986
    Date of Patent: December 20, 1988
    Assignee: GE Solid State Patents, Inc.
    Inventor: Victor Zazzu