Abstract: A variety of processes are disclosed for controlling NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (VNDR) and related parameters. The processes are based on conventional semiconductor manufacturing operations so that an NDR device can be fabricated using silicon based substrates and along with other types of devices.

Abstract: A word processing tool is disclosed for checking the substance and not merely the spelling of words provided by a user. The word checker is capable of identifying potentially inappropriate word choices so that unintentional errors are not introduced into electronic text documents. The word checker can be implemented as a stand-alone procedure, or integrated into a conventional spell-checking program.

Abstract: A process for forming a dual mode FET and a logic circuit to include a negative differential resistance (NDR) characteristic is disclosed. In a FET embodiment, an NDR characteristic is selectively enabled/disabled by forming a body contact bias, thus permitting a dual behavior of the device. Larger collections of such FETs can be synthesized to form dual mode logic circuits as well, so that a single circuit can perform more than one logic operation depending on whether an NDR mode is enabled or not.

Abstract: A pre-erase/incremented erase mechanism is employed to reduce excessive tunnel oxide fields in flash memory cells. A variable conditioning signal removes charge from “fast” bits in the array, so that they are configured to have threshold voltages closer to an ideal initial state in preparation for an erase cycle. In this manner, the voltage thresholds are tightened and equalized, so that over-erasure problems associated with Fowler-Nordheim tunneling erase operations are substantially reduced, and endurance cycles for the array are maximized. The invention can be used in a device in the field, or as part of a design process for a flash memory cell to evaluate device performance.

Abstract: A charge trapping structure for use with an n-channel metal-insulator-semiconductor field-effect transistor (MISFET) is disclosed. A dielectric layer is formed close to a channel region of the MISFET, and includes a number of trapping sites which are arranged and have a concentration sufficient to temporarily store energetic electrons induced by an electric field to move from the channel into the trapping sites. The trapped electrons set up a counter field that depletes the channel of carriers, and as a bias voltage across the channel increases, the device exhibits negative differential resistance (NDR). The charge trapping structure, as well as the rest of the device, are formed using conventional CMOS processing techniques.

Abstract: A programmable timer is disclosed for use in conjunction with a microcontroller circuit. The timer is used as part of a time slice arbiter in a real time operating system, which arbiter manages device routines by allocating them to distinct code time slices executable by such microcontroller. The set up of time slices, including their number, sequence, duration, etc., can be configured and optimized to achieve a desired system performance level based on characteristics of an associated system bus, devices on the bus, etc. The timer operates as a hardware controller to direct the interrupt handler to various entry points in the corresponding routines associated with interrupt based devices on a system bus.