Abstract: A surface acoustic wave device having substantially all of the surface wave energy produced at an input transducer coupled to the output utilization means. Plural reflecting means upon the surface of a piezoelectric substrate reflect surface waves produced by the input transducer in plural directions. The passband characteristics of the device are determined by the interaction of the transfer properties of each of the reflecters as well as those of the input and output transducers. Devices are described having extremely low insertion loss and wide bandwidth with low sidelobes and steep passband skirts.

Abstract: A microwave oven having a door formed from metal structural elements which are welded together and coated with a nonconductive coating. Solid dielectric portions of the microwave seal choke are inserted into the choke regions of the door seal, and slotted portions of one of the steel structural elements are then deformed to form the choke and to lock the solid dielectric portions in place.

Abstract: An improved color display system employing a beam penetration type cathode-ray tube with rapid color switching. The screen electrode is separated from the accelerating electrodes without the use of an isolating mesh so that the voltage applied to the screen electrode is switched across only a relatively small capacitance. The invention may be used in conjunction with either magnetic or electrostatic deflection beam penetration cathode-ray tubes as well as either magnetic or electrostatic focus tubes. Such display systems may be used for radar type random access or scanned raster type displays.

Abstract: A process of forming a composite semiconductor integrated circuit by forming one or more epitaxial layers of semiconductor material on a semiconductor substrate, forming pedestals by etching partially through said epitaxial layers to form regions projecting from said substrate and etching through said epitaxial layers to form stress relieving channels in the substrate surrounding the pedestals. A thick layer of easily removable material such as an evaporated layer of chromium plus gold and a plated layer of gold is deposited of sufficient thickness to provide good mechanical support, and the substrate is removed by lapping, grinding or etching until at least the stress relieving channels are exposed thereby forming separate semiconductor elements containing said epitaxial regions.

Abstract: A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes.

Abstract: A high voltage power supply system particularly adapted for rapid switching of high voltage applied to an anode of a beam penetration color cathode-ray tube. Energy for making the rapid transition between voltage levels is stored in two energy storage inductors, one for upward transitions and the other for downward transitions. When it is desired to change the voltage applied to the cathode-ray tube, the appropriate one of the storage inductors is coupled through a controlled switch to the anode causing the voltage applied to the anode to change at a rapid rate. The voltage rises until the desired voltage level corresponding to a desired output color is reached at which time the switch is turned off and the storage inductor recharged. A tracking high voltage supply maintains the anode at the predetermined voltage level once that level has been reached.

Abstract: A process of forming a composite semiconductor integrated circuit by forming one or more epitaxial layers of semiconductor material on a semiconductor substrate, forming pedestals by etching partially through said epitaxial layers to form regions projecting from said substrate and etching through said epitaxial layers to form stress relieving channels in the substrate surrounding the pedestals. A thick layer of easily removable material such as an evaporated layer of chromium plus gold and a plated layer of gold is deposited of sufficient thickness to provide good mechanical support, and the substrate is removed by lapping, grinding or etching until at least the stress relieving channels are exposed thereby forming separate semiconductor elements containing said epitaxial regions.

Abstract: A microwave semiconductor amplifier or oscillator system in which a semiconductor device has an avalanching region at a junction and a heat sink having a higher thermal conductivity than said avalanching region in close thermal contact with the said junction. The avalanching region has a width substantially less than ten times the thickness of said avalanching region but a length substantially greater than said width. The heat sink is made substantially wider than that of the avalanching region so that heat generated in the avalanching region during operation of the system and moving into the heat sink will have a substantial component thereof moving parallel to the junction, thereby decreasing the thermal resistance between the heat source and the heat sink and hence permitting an increased power output from the system.

Abstract: A differentially adaptive receiver system in which correction is provided for degradation of performance caused by overlapping of adjacent data pulses. A reference signal is produced having the same complex envelope as the received signals and having a constant phase state independent of changes of phase state of the received signals. The received signals are detected against the reference signal as in an ideal matched filter receiver. The detected signals are integrated by an integrate and dump filter over the duration of the pulse period. A correction signal representing the amount of overlap between overlapping adjacent pulses is summed with the output of the integrated dump filter. The sum of the correction signal and integrate and dump filter output is sampled and held by sample and hold circuit to produce the digital data output.

Abstract: A fusing technique whereby a fuse is fabricated upon a substrate by integrated circuit techniques. Three or more layers of chemically dissimilar metals are depositedupon the region where the fuse is to be formed. The top layers are then etched away from the region where the fusible link is to be formed leaving the lower two layers, the top one of which forms the actual fusible link. The lower layer is then etched away leaving the fusible link suspended from the underlying substrate. The current necessary to cause such a fuse to blow is consistent from fuse to fuse since the physical dimensions of the fusible link can accurately be controlled with the integrated circuit techniques used and, since the fusible link is not in contact with the substrate, the rate at which heat is conducted away from the fusible link cannot vary from fuse to fuse.