Abstract: A bipolar fabrication process, illustratively suited for integration into a conventional CMOS process to thereby form a BiCMOS integrated circuits is disclosed. The collector and base are formed through multiple implants and a single masking step to thereby provide a continuous low resistance collector region.
Type:
Grant
Filed:
June 9, 1997
Date of Patent:
December 14, 1999
Assignee:
Lucent Technologies Inc.
Inventors:
Michael Scott Carroll, Samir Chaudhry, Alan Sangone Chen, Yih-Feng Chyan, Kuo-Hua Lee, William John Nagy