Abstract: An epitaxially layered structure with gate voltage bias supply circuit element for improvement in performance for semiconductor field effect transistor (FET) devices utilizes a structure comprised of a substrate, a first layer semiconductor film of either an n-type or a p-type grown epitaxially on the substrate, with the possibility of a buffer layer between the substrate and first layer film, an active semiconductor layer grown epitaxially on the first semiconductor layer with the conductivity type of the active layer being opposite that of the first semiconductor layer, with the active layer having a gate region and a drain region and a source region with electrical contacts to gate, drain and source regions sufficient to form a FET, an electrical contact on either the substrate or the first semiconductor layer, and a gate voltage bias supply circuit element electrically connected to gate contact and to substrate or first semiconductor layer with voltage polarity and magnitude sufficient to increase device

Abstract: An air-clad optical fiber is provided having a core that is surrounded by an inner cladding region, an air-clad region, and an outer region. A lead end of the air-clad optical fiber is prepared for splicing by removing the air-clad region and all fiber regions outside of the air-clad region, so as to expose an inner fiber region. The prepared lead end of the air-clad optical fiber is then spliced to a lead end of the optical device. The air-clad region may be removed from a selected portion of an air-clad fiber by causing an etchant gas to stream through the air-clad region in the selected portion of the fiber. Heat is then applied to the selected fiber portion, causing at least some of the microstructure to be etched away.