Patents Represented by Attorney James Deland

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  • Method for simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks
    Patent number: 5023193
    Abstract: A process is disclosed for simultaneously fabricating bipolar and complementary field effect transistors. The process includes the fabrication of buried layers 18 doped with both phosphorus and arsenic to permit a shorter diffusion time while simultaneously providing buried layers having low resistance and high diffusivity. The process enables fabrication of BiCMOS structures using only six masks prior to the contact mask.
    Type: Grant
    Filed: October 3, 1988
    Date of Patent: June 11, 1991
    Assignee: National Semiconductor Corp.
    Inventors: Juliana Manoliu, Prateep Tuntasood