Abstract: Lower-body garment with a combined stretchably-retained, fastenably-split waist. The waistband is sleevelike and split by overlapping ends having circumferentially opposing mouths. A stretchable band is encapsulated in, and unfixed entirely throughout, the waistband. The stretchable band has opposing ends passing out of the opposing mouths in the waistband and coupled into an endless loop by a coupling device for adjusting the length of the stretchable band. An unfastenable locking mechanism is provided on the overlapping ends of the waistband. Opening/closing portions are formed by at least one split in a predetermined location in the garment body, extending to a common terminal position and continuous with the split in the waistband.

Abstract: An image reading apparatus equipped with an image reading apparatus unit (B) provided a platen (33) and reading means (31) that reads an original, a document feeder (A) provided conveyance paths (P1), (P2), and (P3) leading from a sheet supply tray (1) to a discharge tray (34) via the platen (33) on a top surface of the image reading apparatus unit (B), a hinge device (12) that openably connects the document feeder (A) to a top surface of the image reading apparatus unit (B), wherein an image reading unit (50) is equipped in the document feeder (A), and the image reading unit (50) is integrally connected to a support member fastened to the hinge device (12). This configuration prevents mispositioning or misalignment of a reading line of the image reading unit (50) caused by repeated opening and closing of the document feeder (A).

Abstract: A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFe from a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source (17), and second substance gas GGa containing elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).

Abstract: Machine-tool thermal displacement correcting device having: a tool-temperature estimating unit for recognizing—based on identification data obtained from a controller for designating, out of tools stowed in the tool-changer tool magazine, an exchange-target tool—the directly-after-use temperature of the ID'd tool, and estimating the tool temperature directly before use, based on the recognized directly-after-use tool temperature and on lapsed time, obtained from the controller, since previous use of the ID'd tool, and for estimating, based on the estimated directly-before-use tool temperature and on the spindle temperature, during-use temperature of the tool; a correction determining unit for estimating, based on the estimated during-use tool temperature, axial thermal displacement of the tool, and determining a correction amount for canceling out the displacement; and a correction executing unit for carrying out correction based on the determined correction amount.

Abstract: GaN crystal having few dislocations is grown by using together ELO-mask and defect-seeding-mask means. ELO masks make it so that GaN crystal does not grow directly, but grows laterally; defect-seeding masks make it so that closed defect-gathering regions in which defects are concentrated are grown. Any of the materials SiN, SiON or SiO2 is utilized for the ELO mask, while any of the materials Pt, Ni or Ti is utilized for the defect-seeding masks. With a sapphire, GaAs, spinel, Si, InP, SiC, etc. single-crystal substrate, or one in which a GaN buffer layer is coated onto a single-crystal substrate of these, as an under-substrate, the ELO mask and defect-seeding masks are provided complementarily and GaN is vapor-phase deposited.

Abstract: Ceramic composite material that has excellent mechanical properties within a range from room temperature to high temperature and high die release with respect to glass, resins, ceramics, and similar substances. The ceramic composite material is composed of a ceramic phase and a phase containing 2 to 98 wt. % carbon and/or boron nitride as the main component, and that has a mean particle size of 100 nm or less, wherein the thermal expansion coefficient is within a range of 2.0-9.0×10?6/° C. and the surface roughness after surface polishing is 0.05 ?m or less. The sintered body of the material is obtained by sintering a mixture of powdered starting materials at a sintering temperature of 800-1500° C. and a sintering pressure of 200 MPa or higher.

Abstract: Affords efficiently and at low cost practical, tiny light-emitting devices having an optically diffractive film on their light-output face. A light-emitting device (LD) includes a diffractive film (DF) formed on its light-output face; the diffractive film includes a transparent DLC (diamond-like carbon) layer; and the DLC layer includes a modulated-refractive-index diffraction grating containing local regions of relatively high refractive index and local regions of relatively low refractive index.

Abstract: An indium-containing wafer from which removal of mercury can be reliably performed and a method of manufacturing such a wafer are provided in order to make the mercury C-V method, allowing characteristics of a the indium-containing wafer to be measured with high precision and being a non-destructive test, viable. An indium-containing wafer relating to the present invention is characterized by having, formed on its episurface layer, an added-on mercury-removal layer directed to removing wafer-surface adherent mercury and composed of a compound semiconductor. In addition, a method of manufacturing an indium-containing wafer relating to the present invention is characterized in that after evaluating electrical characteristics of the wafer with, as an electrode, mercury adhered onto the surface of the mercury-removal layer, the superficially adhered mercury is eliminated by removing the mercury-removal layer.

Abstract: A method of manufacturing a group III-V crystal is made available by which good-quality group III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. A method of manufacturing a group III-V crystal, characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Additionally, a method of manufacturing a group III-V crystal, characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.

Abstract: A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).

Abstract: Under a reduced-pressure environment, stopping at will liquid that flows out from a nozzle tip, or dispensing liquid with the level of energy at which it will not splatter has proven difficult. To address such difficulties, parameters including nozzle bore, and surface tension and viscosity of, and delivery pressure on, a liquid are selected so that the surface tension that acts on the liquid when flowing out from the nozzle tip will be greater than the momentum of the liquid. By dispensing liquid under such conditions, outflow of the liquid is reliably controlled, and rapid infusion work is realized.

Abstract: Method of charging dynamic-pressure bearing device with lubricating fluid. Preparatorily, lubricating fluid is put into a vacuum chamber and the chamber is vacuum-evacuated to subject the lubricating fluid to a degassing process. An appropriate quantity of fluid is dispensed in one end of the bearing gap, with the bearing device having been placed in a reduced-pressure ambient. In carrying out the dispensation, the pressure of the ambient is adjusted so as to be higher than the pressure during the degassing process. The method in this way prevents the lubricating fluid from frothing when it is being dispensed, and makes it possible to charge dynamic-pressure bearing devices with lubricating fluid without soiling the bearing-device surfaces with splashes or other contaminants.

Abstract: Heater module, and semiconductor manufacturing equipment in which the heater module is utilized, for raising the cooling speed of a post-heating heater markedly more than conventional, and that can contribute toward bettering and improving productivity, without accompanying scaling-up of and cost increases in the semiconductor manufacturing equipment. The heater module is furnished with heater part 1a for controlled heating of a wafer placed on its top face, and block part 3a provided to be shiftable relative to said heater part, for varying heat capacity in total with heater part 1a by abutting on or separating from the reverse surface of heater part 1a. By having the heat capacity of block part 3a be 20% or more of the total heat capacity of heater part 1a and block part 3a, the heater cooling speed can be made 10° C./min or more.

Abstract: A scanning range sensor includes an outer cover having a transparent window that is horizontally annular, a vertical type cylindrical rotary member inside the outer cover, a light receiving window with an optical lens of the cylindrical rotary member, a light projector between the outer cover and the cylindrical rotary member, an optical system for leading light from the light projector along the direction of the rotational axis of the cylindrical rotary member by the mirrors on the inner surface of the cylindrical rotary member, a photodetector that within the interior of the cylindrical rotary member is fixed and arranged separately from the cylindrical rotary member so as to coincide with the rotational axis of the cylindrical rotary member and is connected to a distance computation circuit, and a reflecting mirror and scanning mirror along the rotational axis of the cylindrical rotary member.

Abstract: Slim-profile centrifugal fan made up of a housing, a motor component, and a airflow-generating component. A disk portion, a cylindrical portion, a plurality of posts, and a plurality of blades compose the airflow-generating component. The plurality of posts project from, and are arranged at a predetermined circumferential spacing along, the outer circumferential surface of the cylindrical portion; and each of the plurality of blades is provided on a respective one of the posts. The posts are of sufficiently greater thickness than the blades. Accordingly, air spaces are formed in between the posts and the blades, yet the blades are retained firmly on the cylindrical portion by the posts.

Abstract: Coating-film furnished coated tools that are lubricative while maintaining resistance to wear are realized by coated tools in which a plurality of coating films is furnished on a base part. Furnished as the coating are one or more layers of, respectively: a first film composed of one compound selected from nitrides, carbides, carbonitrides, oxynitrides and carboxynitrides of TiSi; and a second film composed of one compound selected from nitrides, carbides, carbonitrides, oxynitrides and carboxynitrides of one metal M selected from Ti, Cr, and TiCr. The first film and the second film are laminated in alternation.

Abstract: Manufacturing method enabling optimal volume oil-fill even where differing from bearing to bearing due to machining fluctuations in volume-production dynamic pressure bearings. In a first charging method, injection of oil is divided into two cycles. The first is carried out under reduced pressure, following which the pressure is raised a predetermined amount to force the oil into the bearing gap. The oil-fill status is thereupon checked, the shortage is reckoned, and in the second cycle the shortage is injected. In a second charging method, in a first cycle a surplus volume is injected under reduced pressure and the pressure is raised a predetermined amount to force the oil into the bearing gap. Following that, what is in excess of the appropriate amount is removed from the bearing. The first cycle of injection and the pressure elevation may be implemented multiple times, in between which repeat pressure-reduction can be carried out.

Abstract: Fluid-dynamic-pressure bearing furnished with a shaft, a top plate fixed to an upper portion of the shaft, a thrust plate fixed to a lower portion of the shaft, a sleeve, and a cuplike bearing housing that along its inner periphery retains the sleeve. A lubricating-fluid-filled continuous micro-gap is formed in between the shaft and the sleeve and the top plate and the sleeve. Radial bearing sections are formed in between the shaft cylindrical outer surface and the sleeve cylindrical inner surface. An upper thrust bearing section is formed in between the undersurface of the top plate and the top-edge face of the bearing housing. A lower thrust bearing section formed in between the bottom margin of the sleeve and the top margin of the thrust plate. The bearing sections are each provided with dynamic-pressure-generating grooves for inducing dynamic pressure in the lubricating fluid when the shaft or sleeve spins.

Abstract: In a semiconductor heat-dissipating substrate made of a Cu—W alloys whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 ?m or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 ?m or less, thermal conductivity of 210 W/m·K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.

Abstract: Heater module, and semiconductor manufacturing equipment in which the heater module is utilized, for raising the cooling speed of a post-heating heater markedly more than conventional, and that can contribute toward bettering and improving productivity, without accompanying scaling-up of and cost increases in the semiconductor manufacturing equipment. The heater module is furnished with heater part 1a for controlled heating of a wafer placed on its top face, and block part 3a provided to be shiftable relative to said heater part, for varying heat capacity in total with heater part 1a by abutting on or separating from the reverse surface of heater part 1a. By having the heat capacity of block part 3a be 20% or more of the total heat capacity of heater part 1a and block part 3a, the heater cooling speed can be made 10° C./min or more.