Abstract: In a field programmable gate array, a test circuit for testing the signal path of a line, through a pass gate, and onto a second line. A memory cell outputs at a V.sub.GG level, where V.sub.GG .gtoreq.V.sub.DD +V.sub.TN. In order to dynamically test the signal path, three transistors and two test signals are used to apply either 0 volts or V.sub.GG to control the pass gate. Two of the transistors are coupled to the memory cell and the pass gate, whereas the third transistor is coupled to the first and second transistors and ground. The two test signals and an inverter control these transistors so that the memory state can be changed to dynamically switch the pass gate according to the test configuration. An electrical signal is then sent through the signal path under test, and the result is monitored.

Abstract: A selectively decoupled latch circuit used for latching a signal. The circuit contains an input line for accepting an input signal to the circuit. A latch is connected to the input line for latching the input signal. A transfer gate is also connected to the input line and latch for transferring the input signal to the latch according to a clock signal. A transistor is connected in a series with a feedback loop associated with the latch. The transistor selectively decouples the feedback path according to the clock signal. By selectively decoupling the feedback path, it is easier for a new input signal to become latched because contention between a prior latched signal versus the new input signal is minimized. An output line is connected to the latch for outputting a latched signal.

Abstract: In a field programmable gate array, a test circuit for testing the signal path of a line, through a pass gate, and onto a second line. A memory cell outputs at a V.sub.GG level, where V.sub.GG .gtoreq.V.sub.DD +V.sub.TN. In order to dynamically test the signal path, three transistors and two test signals are used to apply either 0 volts or V.sub.GG to control the pass gate. Two of the transistors are coupled to the memory cell and the pass gate, whereas the third transistor is coupled to the first and second transistors and ground. The two test signals and an inverter control these transistors so that the memory state can be changed to dynamically switch the pass gate according to the test configuration. An electrical signal is then sent through the signal path under test, and the result is monitored.