Abstract: An improved interferometer system for detecting the etch rate of an opaque material, such as silicon or metal. The system includes means for producing two parallel beams of light, with one beam being directed to the surface of the opaque material, and the other beam being directed to the surface of an adjacent masking material of transparent nature. The rate of etch of the opaque material is detected from the interference pattern changes between the first beam and the second beam. The system utilizes a novel arrangement of beam splitters which results in equal path lengths for the respective beams and further includes a viewing light which is passed by a system of dichroic filters to enable observation of the focus spot.

Abstract: A resist composition includes an alkali soluble resin, a light sensitive diazo compound, and a thermally activated free radical initiator. Resist masks are formed from the above composition by providing a layer of resist on a substrate, exposing the layer patternwise to radiation, removing portions of the layer with a developing solution, and heating the remaining portions of the layer at a temperature which activates the initiator and cross-links the resist to improve the physical characteristics of the resist layer and minimize pattern distortion.

Abstract: A contactless air film lift-up device constructed to utilize the pressure-velocity relationship expressed in the Bernoulli principle to provide a desired pick-up action, while at the same time generating a lateral restraining force through a further utilization of the Bernoulli principle.

Abstract: In electron beam apparatus having a souce of electrons and a target area toward which the electrons are directed, electron beam forming means are provided along the path from the source to the target. These forming means include a first beam shaping member having a first spot shaping aperture therein, a second beam shaping member having a second spot shaping aperture therein, and means focusing the image of the first aperture in the plane of the second aperture to thereby form a composite spot shape defined by the image of the first aperture and the second aperture. Further means are provided for focusing the image of the composite spot in the target area.Preferably, the apertures are square shaped. Thus, by varying the position of the superimposed image of the first aperture with respect to the second aperture, a wide variety of rectangular shaped composite spots with different dimensions is obtainable. This permits the exposure of rectilinear patterns, e.g.

Abstract: A method of making silicon solar cells and other silicon photovoltaic cells. The method includes the steps of forming a silicon element having a metallic electrode coating on one surface of the element, applying to the other surface of the element a coating containing aluminum and silicon and heating the coated element at a temperature below the eutectic temperature of aluminum-silicon to form an antireflective coating of a fine matrix of silicon pyramids doped with aluminum. The matrix formed on the surface of the silicon has an overlying aluminum coating. A portion of the aluminum coating is removed to expose the matrix for use as a photovoltaic cell.

Abstract: A sputtering system adapted for depositing quartz in uniform thicknesses upon multiple wafers processed in batches including an anode plate having a plurality of wafer locations spaced from the center of the anode, with each wafer location comprising a wafer receiving recess in the anode plate having an angular bottom slope which, in effect, tilts the wafer to an optimum deposition angle with respect to the cathode, depending upon wafer spacing from the center of the anode, to insure uniform deposition across the wafer.

Abstract: An etchant comprising a solution of hydrogen fluoride dissolved in an organic solvent such as glycerine. The solution is substantially free of unbound water and ammonium fluoride. The etchant is particularly suitable for removing silicon dioxide disposed atop a metallic silicide formed in a silicon semiconductor where the silicon may be exposed.

Abstract: An electron beam system useful in microfabrication of large scale integrated circuit patterns, particularly those of repetitive nature. The electron beam system includes beam shaping and aperture means disposed between an electron beam source and a target area which permit formation and projection of preselected entire characters or portions thereof into the target area for writing upon a wafer at that location. The pattern cells of such characters may contain as many as 1600 image points which are addressed and projected in parallel, thereby greatly reducing the handling requirements for pattern data as opposed to the techniques utilized in prior art scanning electron beam systems. The system further includes means for correcting for spherical aberration arising in the projection of images comprising a large number of parallel image points.