Abstract: A semiconductor device having a p type polysilicon resistor (56) with a moderate sheet resistance and low temperature coefficient of resistance is formed by a double-level polysilicon process. The process also produces n and p-channel transistors (44, 50), a capacitor having upper and lower n type polysilicon capacitor plates (36, 26), an n type polysilicon resistor (32) having a high sheet resistance, and an n type resistor (34) having a low sheet resistance. The p type doping used to form the source/drain regions (48) of p-channel transistor (50) counterdopes n type second level polysilicon to form p type polysilicon resistor (56) without effecting capacitor plates (36, 26) or the n type resistors (32, 34).

Abstract: A method and apparatus for reading visual indicia is disclosed. The method involves capturing the visual indicia as a digital image, isolating the visual indicia on the digital image, converting the visual indicia to image primitives, identifying the identified visual indicia, and presenting the visual indicia. The apparatus contains a camera for capturing a visual image, a video-to-digital converter, and a computing means.