Abstract: During the etching of a silicon-containing material using a halogen-containing etch gas, a silicon-hydride gas is added to the etch gas to provide increased sidewall protection during the etch. Suitably up to about 50 percent by volume of a silicon-containing gas such as silane is added to improve anisotropy of the etch and to prevent notching at the silicon-substrate interface.
Type:
Grant
Filed:
August 24, 1995
Date of Patent:
January 6, 1998
Assignee:
Applied Materials, Inc.
Inventors:
Dale A. Olson, Xue-Yu Qian, Patty Hui-ing Tsai