Abstract: A low-k dielectric layer having a composition of silicon, oxygen and carbon is removed from a wafer. The low-k dielectric layer is removed by exposing a surface of the low-k dielectric layer to an oxygen-containing gas to oxidized the surface. The oxidized surface is immersed in an etching solution having HF and H2SO4 to etch the low-k dielectric layer. The etched surface is exposed to at least one of (i) an etching solution having H2SO4 and H2O2, and (ii) an RF or microwave energized oxygen-containing gas, to remove the low-k dielectric layer from the wafer.

Abstract: Hydrocarbons are recovered from a subterranean reservoir by drilling an injection well bore having an outlet in the reservoir and drilling a production well bore spaced apart from the injection well bore and having an inlet in the reservoir. A permeable zone having a first patterned web of channels radiating outwardly from the outlet of the injection well and connecting to a second patterned web of channels radiating outwardly from the inlet of the production well is formed in the reservoir. Heated fluid is passed from the outlet into the permeable zone to mobilize hydrocarbons in the subterranean reservoir so that the mobilized hydrocarbons flow toward the inlet. The permeable zone fans out from the wells to cover an extended area of the reservoir to enhance hydrocarbon recovery by heating hydrocarbons from an expanded area of a reservoir and gravity draining the hydrocarbons.

Abstract: A composition suitable for treating metal surfaces prior to bonding of the surfaces to materials including metals, rubber, glass, polymers, sealants, coatings, and in particular polymeric adhesives, to enhance the strength of the bond and to prolong useful life in corrosive environments, is described.