Abstract: A silicon carbide sintered body exhibiting N-type semiconductivity is produced by shaping a mixture of .beta.-silicon carbide, boron additive and a carbonaceous additive into a green body and sintering the body in an atmosphere containing nitrogen to produce a sintered body having a density of at least about 90% and pores which are substantially non-interconnecting.

Abstract: A particulate mixture of an alkali chloride solvent salt, a lithium salt reactant selected from the group consisting of lithium hydroxide, lithium nitrate, lithium carbonate and mixtures thereof, and an aluminum salt reactant selected from the group consisting of aluminum hydroxide, alpha-alumina, gamma-alumina and mixtures thereof is heated to melt the chloride salt solvent in which the lithium and aluminum salt reactants dissolve and react precipitating lithium meta-aluminate.

Abstract: Magnetic adsorbent composite composed of a magnetic substrate particle which is non-reactive under conditions of use and which is encapsulated with adherent activated carbon.

Abstract: A method for removal of insoluble suspended impurities from polluted liquids by adding thereto a magnetic ferrite powder suspendible therein and a polyethyleneimine flocculant which flocculates suspended solid impurities and the magnetic powder producing a dense flocculated mixture.

Abstract: Extensive development of deformation bands in diamond crystals results from subjecting diamond material properly confined to reduce or eliminate brittle fracture thereof to the simultaneous application of high pressure and temperature in a defined region on the carbon phase diagram, the pressures and temperatures being incapable of bringing about significant crystal-to-crystal bonding of diamond. Plastic deformation resulting in work-hardening of these diamonds can be made to occur at temperatures as low as 900.degree. C. at pressures of about 60 kb. A work-hardened diamond for use in a single-point diamond tool would, for example, be prepared by embedding the diamond in diamond powder to fill the volume thereby inhibiting brittle fracture of the diamond being work-hardened.

Abstract: Type Ib synthetic diamond crystal is annealed at an annealing temperature ranging from about 1500.degree. C. to about 2200.degree. C. under a pressure which prevents significant graphitization of the diamond during the annealing to convert at least about 20% of the total amount of type Ib nitrogen present in the crystal to type Ia nitrogen.

Abstract: A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon nitride ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon nitride substrate sufficiently producing, upon cooling, an adherently bonded integral composite.

Abstract: A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.

Abstract: A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.

Abstract: A cavity of predetermined size is formed in a compressed pressure transmitting powder medium, a mass of diamond crystals in contact with a mass of elemental silicon are disposed within the cavity and additional pressure transmitting powder is placed over the cavity and its contents producing a powder-enveloped cavity. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the cavity therein and its contents sufficient to dimensionally stabilize the cavity and its contents. The resulting shaped substantially isostatic system of powder-enveloped diamond and silicon is hot-pressed to liquefy and infiltrate the silicon through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.

Abstract: A cobalt-rare earth alloy sintered product is substantially magnetized by heating or cooling it to a temperature at which its intrinsic coercive force H.sub.ci is significantly lower than at room temperature, applying a relatively small magnetizing field to it at such temperature and cooling or warming it in the magnetizing field to room temperature.

Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing air into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.

Abstract: Sodium chloride and/or potassium chloride is added to an aqueous suspension of the oxides of lead, titanium and zirconium and stirred until the suspension converts to a gel which is then heated evaporating the water and melting said chloride in which the oxides dissolve and react precipitating lead zirconate titanate.

Abstract: Sodium chloride and/or potassium chloride is added to an aqueous suspension of the oxides of lead, titanium, zirconium and cationic modifier and stirred until the suspension converts to a gel which is then heated, evaporating the water and melting said chloride in which the oxides dissolve and react precipitating modified lead zirconium titanate.

Abstract: A mass of diamond crystals contacting a mass of elemental silicon are confined within a pressure-transmitting medium. The resulting charge assembly is subjected to a pressure of at least 25 kilobars causing application of isostatic pressure to the contacting masses which dimensionally stabilizes them and increases the density of the mass of diamond crystals. The resulting pressure-maintained charge assembly is heated to a temperature sufficient to melt the silicon and at which no significant graphitization of the diamond occurs whereby the silicon is infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.

Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing nitrogen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.

Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing oxygen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.

Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing nitrogen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb.sub.3 Ge on the heated substrate.

Abstract: A superconductive film of Nb.sub.3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10.sup.-5 mm Hg, introducing oxygen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposite a film of Nb.sub.3 Ge on the heated substrate.

Abstract: A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.