Abstract: Methods of construction for acoustic and electrically amplified stringed musical instruments. The invention further relates to acoustic and electrically amplified stringed musical instruments comprising fiber-reinforced resin composite materials, where the instruments are provided with a sound-damping interior coating.

Abstract: Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formulaM(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.ywherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups.

Abstract: This invention relates to electron emitting semiconductor materials for use in dynodes, dynode devices incorporating such materials, and methods of making the dynode devices. In particular, the invention relates to emissive materials having an electron affinity that is negative and which have low resistivity. The invention also relates to electronic devices such as electron multipliers, ion detectors, and photomultiplier tubes incorporating the dynodes comprising the materials, and to methods for fabricating the electronic devices. The secondary electron emitters of the present invention comprise wide bandgap semiconductor films selected from diamond, AlN, BN, Ga.sub.1-y Al.sub.y N where 0.ltoreq.y.ltoreq.1 and (AlN).sub.x (SiC).sub.1-x where 0.2.ltoreq.x.ltoreq.1. The films are preferably single crystal or polycrystalline. The films may be continuous or patterned.

Abstract: Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formulaM(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.ywherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.

Abstract: Diamond and diamond-like materials having photochemically modified surfaces, and a process for photochemically modifying the surface of diamond and diamond-like materials. Preferably, the substrate to be modified is a single crystal, polycrystalline film or powder of diamond or any silicon carbide polytype. Photochemical modification of the surface enables the addition or exchange of specific surface functional groups. These surface modifiers change the chemical, adhesive and electronic properties of the diamond and diamond-like substrate materials. The modified subtrates are useful for producing semiconductor devices for use at high temperatures, high powers, and in otherwise harsh environments.

Abstract: A green-blue to ultraviolet light-emitting optical device, e.g. a green-blue to ultraviolet emitting laser or a green-blue to ultraviolet emitting diode, comprising a green-blue to ultraviolet light emitting gallium nitride material on a base structure including a silicon carbide substrate, which preferably consists of 2H-SiC, 4H-SiC, or a-axis oriented 6H-SiC. The carrier mobility and the transparency of the silicon carbide substrate are optimized by the selection of orientation and polytype, thus enhancing device performance. The light-emitting diodes may incorporate a structural modification to increase the light output comprising a dielectric Bragg mirror beneath the LED structure, made of alternating layers of AlN, GaN, InN or their alloys. Methods for making such light-emitting diodes are provided, including a technique for defining individual devices by mesa etching which avoids possible damage to the active area during dicing.

Abstract: A chemical vapor deposition method for forming films or coatings of metal oxide films showing a giant magnetoresistive effect, with the metal oxides having the formula La.sub.x A.sub.1-x MnO.sub.3 wherein A is selected from the group consisting of barium, calcium, manganese, and strontium, and x is a number in the range of from 0.2 to 0.4. The method uses a liquid source delivery CVD approach, wherein source reagent solution precursor is flash vaporized and is delivered to a CVD chamber, wherein it decomposes to deposit the multicomponent metal oxide films with well-controlled stoichiometry.

Abstract: Stable, high temperature electrical contacts to silicon carbide formed using a unique silicide formation process that employs a sacrificial silicon layer between the silicon carbide and the contacting metal, which forms a metal silicide interlayer providing the resulting contact with low specific contact resistance and high electrical and structural stability. The contact interface is formed by reaction below the semiconductor surface, and thus the in-situ silicide formation process is insensitive to surface impurities and oxides and permits the controlled formation of silicides without the formation of excess carbon and carbides at the contact interface. The silicon layer may optionally be doped in situ during growth or implanted with dopants after growth, to lower the contact resistance and enhance its operational stability.

Abstract: Bimetallic alkoxide compounds useful as source reagents for chemical vapor deposition of ferroelectric ceramics such as lead titanate and lead zirconate, and lead zirconate titanate (PZT). The novel bimetallic alkoxide compounds of the present invention have the formula R.sup.1.sub.x PbM(OR.sup.2).sub.y (OR.sup.3).sub.z (1) or R.sup.1.sub.x PbOM(OR.sup.2).sub.y (OR.sup.3).sub.z (2), wherein M is a Group IVB metal, especially titanium or zirconium, and R.sup.1, R.sup.2, and R.sup.3 are independently selected hydrocarbyls, especially C1-C6 alkyls. In these compounds, lead may be present in the +2 or +4 oxidation states. For compound 1, when lead is in the +2 oxidation state, x may be 0, 1 or 2, y and z range from 0 to 4, and x+y+z=6. When lead is present in the +4 oxidation state, x may range from 0 to 3, y and z range from 0 to 6, and x+y+z=8. For compound 2, when lead is in the +2 oxidation state, x may be 0, 1 or 2, y and z range from 0 to 4, and x+y+z=4.

Abstract: Novel tellurium compounds of the present invention have the formula:TeR.sup.1 R.sup.2wherein R.sup.1 is a fluorinated alkyl having the formula C.sub.n F.sub.(2n+1)-x H.sub.x where n may range from 1 to 6 and x may range from 0 to 2n, and R.sup.2 is selected from the group consisting of alkyls having 2 to 6 carbon atoms, cycloalkyls having 3 to 6 carbon atoms, allyl, alkyl-substituted allyl having 4 to 6 carbon atoms, cyclopentadienyl, benzyl, alpha-methylbenzyl, and bis(alpha-methyl)benzyl. The novel tellurium reagents are useful as sources for organometallic vapor deposition processes, particularly the MOCVD fabrication of II-VI semiconductor materials such as Hg.sub.x Cd.sub.1-x Te. The compounds are synthesized by high yield ligand exchange reactions between Te(R.sup.1).sub.2 and Te(R.sup.2).sub.2.