Abstract: A highly efficient fast charger for high capacity batteries and methods for fast charging high capacity batteries. The fast charger preferably comprises a rectified AC input of single or preferably three phases, with an optional power factor corrected input, minimally filtered with high frequency, high ripple current capacitors, which is switched with a power switching circuit in the “buck” configuration into an inductor/capacitor output filter. Metallized film capacitors are employed, to minimize the rectified 360 Hertz AC component filtering while providing transient switch protection and ripple current requirements for the buck regulator, to provide a high current fast charger with substantially improved power factor. High power, high frequency switching with minimized output filter size provides a highly filtered DC output. The fast charger is adapted to be constructed in a modular design for simple maintenance.

Abstract: An integrated electronic-optoelectronic module comprising: an ultrathin silicon-on-sapphire composite substrate; at least one electronic device fabricated in the ultrathin silicon; and at least one optoelectronic device bonded to the ultrathin silicon-on-sapphire composite substrate and in electrical communication with the at least one electronic device fabricated in the ultrathin silicon layer. For example, VCSELs and photodetectors are integrated with CMOS electronic circuitry to provide useful modules for electro-optical interconnects for computing and switching systems.

Abstract: Stable, high temperature electrical contacts to silicon carbide formed using a unique silicide formation process that employs a sacrificial silicon layer between the silicon carbide and the contacting metal, which forms a metal silicide interlayer providing the resulting contact with low specific contact resistance and high electrical and structural stability. The contact interface is formed by reaction below the semiconductor surface, and thus the in-situ silicide formation process is insensitive to surface impurities and oxides and permits the controlled formation of silicides without the formation of excess carbon and carbides at the contact interface. The silicon layer may optionally be doped in situ during growth or implanted with dopants after growth, to lower the contact resistance and enhance its operational stability.

Abstract: There is disclosed a structure of and a method for fabricating a ferroelectric film on a non-conductive substrate. An adhesion layer, e.g., a layer of silicon dioxide and a layer of zirconium oxide, is deposited over a substrate. A conductive layer, e.g., a noble metal, a non-noble metal, or a conductive oxide, is deposited over the adhesion layer. A seed layer, e.g., a compound containing lead, lanthanum, titanium, and oxygen, with a controlled crystal lattice orientation, is deposited on the conductive layer. This seed layer has ferroelectric properties. Over the seed layer, another ferroelectric material, e.g., lead zirconium titanate, can be deposited with a tetragonal or rhombohedral crystalline lattice structure with predetermined and controlled crystal orientation.

Abstract: A process system with an integrated gas storage and delivery unit comprising an adsorption-desorption apparatus, for storage and dispensing of a gas wherein the gas is dispensed by pressure differential desorption of the sorbate gas from the sorbent material. A motive fluid driver, e.g., a pump, blower, compressor, eductor, or the like, is arranged for flowing the dispensed gas to a gas-utilizing unit, such as an ion-implant unit, wastewater treatment unit, gas-liquid contacting chamber, chemical vapor deposition reactor, gas laser assembly, etc.

Abstract: An adsorption-desorption apparatus, for storage and dispensing of a sorbable gas, wherein a physical sorbent medium bearing the adsorbed gas to be selectively dispensed is delivered by pressure differential desorption and/or thermal desorption of the sorbate gas from the sorbent material. The sorbent material preferably comprises a material which is characterized by a Sorbent Working Capacity, measured for arsine at 40 Torr and at 650 Torr, of at least 50 grams arsine per liter of bed of the sorbent material.

Abstract: A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with said plasma etching, contacting the metal containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal containing material, in relation to a corresponding plasma etching of the metal containing material layer on the substrate in the absence of the etch enhancing reactant metal material being contacted with the etch enhancing reactant.

Abstract: An adsorption-desorption apparatus, for storage and dispensing of a sorbable gas, wherein a carbon physical sorbent medium bearing the adsorbed gas to be selectively dispensed is delivered by pressure differential desorption and/or thermal desorption of the sorbate gas from the sorbent material. The carbon sorbent material preferably comprises a material which is characterized by a Sorbent Working Capacity, measured for arsine at 40 Torr and at 650 Torr, of at least 100 grams arsine per liter of bed of the sorbent material, e.g., a carbon sorbent material having the adsorption isotherm characteristic of curve A in FIG. 1 herein.

Abstract: A precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA.sub.3 (L).sub.x ; (ii) phosphido complexes of the formulae M(PR.sub.3).sub.3 or M(PR.sub.3).sub.3 L.sub.x ; and (iii) disubstituted phosphate complexes of the formulae A.sub.2 M(O.sub.2 P(OR).sub.2), AM(O.sub.2 P(OR).sub.2).sub.2, and M(O.sub.2 P(OR).sub.2).sub.3, wherein: x is from 1 to 5, A=Cp or .beta.-diketonate, Cp=cyclopentadienyl, methylcyclopentadienyl, or TMS-cyclopentadienyl, R=C.sub.1 -C.sub.8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a .beta.-diketonate compound of formula (i), L is not phosphate or phosphine oxide.

Abstract: An article comprising a non-conductive substrate, preferably of an environmentally degradeable character, having a thickness of an oxidizable metal coating thereon, and optionally an oxidation enhancingly effective amount of a salt, e.g., from about 0.005 to about 25% by weight of salt, based on the weight of oxidizable metal, present on the oxidizable metal coating. Also disclosed is a related method of forming such article, comprising chemical vapor depositing the oxidizable metal coating on the substrate. When utilized in a form comprising fine-diameter substrate elements such as filaments, the resulting product may be usefully employed as an "evanescent" chaff. In the presence of atmospheric moisture, such evanescent chaff undergoes oxidization of the oxidizable metal coating so that the conductivity and radar absorbance/reflectance characteristics of the chaff transiently decays.

Abstract: A method of making a single crystal Ga*N article, including the steps of: providing a substrate of crystalline material having a surface which is epitaxially compatible with Ga*N; depositing a layer of single crystal Ga*N over the surface of the substrate; and etchably removing the substrate from the layer of single crystal Ga*N, to yield the layer of single crystal Ga*N as said single crystal Ga*N article. The invention in an article aspect relates to bulk single crystal Ga*N articles, such as are suitable for use as a substrate for the fabrication of microelectronic structures thereon, and to microelectronic devices comprising bulk single crystal Ga*N substrates, and their precursor structures.

Abstract: A system for recovery of adsorbed gas remaining in a used storage and dispensing vessel containing sorbent material having residual sorbate gas thereon, when the vessel is taken out of service, in which the used storage and dispensing vessel is coupled in flow communication with at least one fresh storage and dispensing vessel containing sorbent material therein having sorptive capacity for the residual sorbate gas. The fresh vessel is maintained in a first zone and the used vessel is maintained in a second zone, at temperature and/or pressure conditions relative to one another that cause the residual sorbate gas to desorb from the sorbent material in the used storage and dispensing vessel and flow into the fresh storage and dispensing vessel for sorption of the residual sorbate gas on the sorbent material in the fresh storage and dispensing vessel.

Abstract: A flashback protection apparatus and method for suppressing deflagration of a deflagration-susceptible gas in a flow system in which the deflagration-susceptible gas is flowed. The method of the invention comprises monitoring the combustible gas to detect deflagration therein, and upon detection of a deflagration event producing a propagating flame front, opposedly directing at the propagating flame front a pressurized non-flammable gas in a sufficient volume and at a sufficient velocity to provide a non-flammable gas flow having a momentum at least opposedly equal to momentum of the propagating flame front and the associated accelerated combustible gas undergoing deflagration.

Abstract: A method for the self-protection of an aircraft or the like against radar-guided missiles and a self-protection device for use in aircraft and the like against radar-guided missiles, which enables in-flight cutting and dispensing of chaff dipoles of a preselected length into the airstream along the flight path of the aircraft. The device comprises a housing enclosing a motor having a flywheel providing a motor inertia that enables the motor to maintain a substantially constant rotational speed when a load is applied, a magnetic clutch, gearing for rotating a platen roller and a cutter roller, as well as means for controlling the operation of the device, and an exit opening with a spoiler for dispensing the cut dipoles into the airstream.

Abstract: A green-blue to ultraviolet light-emitting optical device, e.g. a green-blue to ultraviolet emitting laser or a green-blue to ultraviolet emitting diode, comprising a green-blue to ultraviolet light emitting gallium nitride material on a base structure including a silicon carbide substrate, which preferably consists of 2H--SiC, 4H--SiC, or a-axis oriented 6H--SiC. The carrier mobility and the transparency of the silicon carbide substrate are optimized by the selection of orientation and polytype, thus enhancing device performance. The light-emitting diodes may incorporate a structural modification to increase the light output comprising a dielectric Bragg mirror beneath the LED structure, made of alternating layers of AlN, GaN, InN or their alloys. Methods for making such light-emitting diodes are provided, including a technique for defining individual devices by mesa etching which avoids possible damage to the active area during dicing.

Abstract: An apparatus for dispersingly delivering a vapor-phase source reagent material containing a deposition species, to a substrate for deposition of such species thereon. The apparatus includes a disperser housing having a front wall with an array of discharge openings therein for discharging vapor-phase source reagent material from the housing interior volume onto a wafer or other substrate article mounted in vapor-receiving relationship to the disperser housing front wall. The front wall includes interior heat transfer passages arranged in a manifolded conformation for highly efficient temperature stabilization of the vapor discharged from the housing discharge openings, to produce highly uniform thickness deposited films on the substrate.

Abstract: A process for recovery of halocarbons from a gas mixture containing the halocarbon and acid gas components comprises the steps of contacting the gas mixture with a dry scrubber to remove the acid gas components from the gas mixture and yield a first effluent gas mixture containing the halocarbon. The first effluent gas mixture is contacted with an adsorbent which is selective for the halocarbon component of the first effluent gas mixture to adsorb the halocarbon component and yield a second effluent gas. The adsorbed halocarbon is recovered by desorbing same from the adsorbent. The process of contacting with adsorbent can be carried out in at least two adsorbent beds joined at inlet and outlet ends thereof to gas feed and gas discharge manifolds, respectively.

Abstract: An adsorption-desorption apparatus, for storage and dispensing of a gas selected from the group consisting of hydride gases, halide gases, and organometallic Group V gaseous compounds, wherein the gas to be dispensed is adsorbed on a physical sorbent medium and selectively dispensed by pressure differential desorption of the sorbate gas from the sorbent material. The sorbent medium preferably is devoid of concentrations of water, metals, and oxidic transition metal species which decompose the sorbate gas in the storage and dispensing vessel, e.g., containing less than 500 parts-per-million by weight of water and oxidic transition metal species, based on the weight of the physical sorbent medium. A cryopumping gas storage and delivery system is also disclosed for neat, high pressure, high purity delivery of the dispensed product gas.

Abstract: Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a metal such as Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm Yb, Lu Bi, Tl, Y or Pb; A is a monodentate or multidentate organic ligand; y is 2 or 3; MAy is a stable sub-complex at STP conditions; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O, and F. The ligand A may for example be selected from beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases.

Abstract: A means and method for protecting the moving parts of a pump that is used to pump air- or moisture-sensitive liquids, comprising blanketing the wetted parts of the pump with an inert medium and/or admixing the process liquid with a low vapor pressure liquid component effective for inhibiting corrosion or particulate formation. In another aspect, the invention relates to an apparatus for protecting the wetted, moving parts of pumps used to pump air- or moisture-sensitive liquids. The apparatus provides a mantle within which an inert medium is flowed around the moving, wetted pump parts to continually purge them of any air or moisture.