Abstract: An enhanced security method is provided for accessing information from a second computer using a password at a first computer. According to such method, a password used for accessing information is inputted to the first computer and stored on the first computer. Thereafter, the stored password is encoded using an encoding algorithm which is system specific to the first computer, and the encoded password is then transmitted to the second computer. The encoded password is used at the second computer to grant or deny access to the requested information, without the second computer having to decode the encoded password to obtain the password stored on the first computer.

Abstract: A method, a system, and a recording medium are provided herein by which a user selects a number of a plurality of events for which an outcome of each event is not known to the user. A predicted result is then automatically indicated to the user based on a probability that a predetermined outcome will occur among the user-selected number of events.

Abstract: An exemplary embodiment of the invention relates to a computer-based method and system for providing multi-user electronic calendaring and scheduling functions in an extended enterprise environment. The method includes scheduling trainees for online classes conducted by a training system, presenting a template pertaining to an open class time, associating scheduled class data to the scheduler for tracking and confirmation purposes, emailing notifications to trainees, updating class registration and related databases in real time via replication functions, aggregating and transmitting class registration data to the training system, and transmitting results of classes to trainees and the scheduler all via a multi-user electronic calendaring and scheduling application.

Abstract: A method and apparatus are provided for controlling the use of chemical materials in a semiconductor factory. The control is based upon the relationship among certain important dates relative to the useful life of the chemical materials used in the semiconductor manufacturing process. These dates include the current date and the expiration date, a critical date and a warning date for each chemical used on a particular assembly line. The expiration date is based upon a date beyond which the chemicals are not to be used in the semiconductor factory process. The critical date is usually no more than 3-4 days before the expiration date. Certain chemicals need more careful monitoring during this critical period. The warning date, usually a week before the expiration date, is used to alert the relevant engineering and production staff that a period of close attention on a particular production run is required. There are four major decision points in the method that is implemented by the apparatus.

Abstract: An apparatus for monitoring and recording multiple gate dielectric leakage currents during a reliability characterization test. The large number of devices tested allows for longer testing at lower voltages thereby minimizing the need to rely on mathematical models. Solid-state multiplexers (MUX) at multiple levels of test apparatus assembly eliminate excess wiring and allow for constant scan monitoring of the devices under test (DUT) without concern for wearout of electromechanical switches. Data resolution is enhanced with fewer data readings per fixed time period during quiescent periods and multiple readings when the leakage current is changing more rapidly. Thus the resolution of the data is maximized during the critical phase of dielectric breakdown allowing for more precise characterizations of gate dielectrics without the need to increase data storage.

Abstract: A method for forming a semiconductor device comprising forming a dielectric layer on an area of a silicon substrate; implanting nitrogen atoms into said dielectric layer; forming a conductive layer of polysilicon over said dielectric layer; annealing the dielectric layer to drive the nitrogen atoms to form a gate dielectric of a dielectric layer having silicon nitride layer interfaces of the dielectric layer and the silicon substrate and the polysilicon layers; and, forming a gate structure in said polysilicon layer and source/drain regions in said silicon substrate, said source/drain regions aligned with said gate structure.