Abstract: The method for making a charge coupled device includes: forming a semiconductor region 24 of a first conductivity type; forming gate regions 28 and 30 overlying and separated from the semiconductor region 24; forming clocked barrier implants 36 and 38 of a second conductivity type in the semiconductor region 24 and aligned to the gate regions 36 and 38; depositing a semiconductor layer 70 overlying and separated from the semiconductor region 24 and the gate regions 28 and 30; removing a portion of the semiconductor layer 70 leaving semiconductor side walls 40 and 42 coupled to the gate regions 28 and 30.