Abstract: A heavily doped semiconductor layer is formed over the barrel of a vertical cavity surface emitting laser (VCSEL), providing current conduction and current spreading across and into the aperture of a laser barrel, while eliminating the need for a light-obstructing conductive electrical contact overhang. The VCSEL comprises a substrate, a first distributed Bragg reflector (DBR), an active region, a second DBR having a non-conductive ion implantation region and a laser barrel region with a first diameter, the heavily doped semiconductor layer, and a conductive electrical contact. The conductive electrical contact defines an opening with a second diameter that is greater than the first diameter.

Abstract: A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of legs extending in one direction, and the second electrode has a number of legs extending in the opposite direction. At least portions of the legs of the first electrode are interspersed with and spaced apart from portions of the legs of the second electrode. This provides a configuration that enhances current spreading along the length of the legs of both electrodes.

Abstract: A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.

Abstract: A Gallium Nitride based Light Emitting Diode (LED) includes both a transparent substrate and a window for exiting light generated by the LED. Useful amounts of light may be utilized at the face of the window or at the face of the transparent substrate. An external optical reflector is formed directly on the external face of the LED which is not currently being used to exit useful light. If light from the window is being utilized, a Distributed Bragg Reflector (DBR) is formed directly on the “backside” of the substrate. However, if light through the substrate is being utilized, a Distributed Bragg Reflector is formed directly on the light emitting portion of the window.

Abstract: A GaN based three layer buffer structure disposed on a substrate, and having a GaN layer disposed on the three layer buffer structure, the GaN layer serving as a platform for growth of a light emitting structure thereon.

Abstract: A light-emitting diode (LED) constructed of AlGaInP compounds includes a multi-layer window having, in the order of formation, a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium/gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Schottky diode connection with the first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.

Abstract: A pasta machine includes a housing with a removable container for holding a liquid such as water, and the housing includes a heater for heating the liquid to a boiling state. An enclosed colander having a cover and holding a food product such as pasta is disposed on the container and includes arms to allow it to rotate through the boiling water. The housing of the pasta machine includes a suitable control mechanism that controls rotation of the colander through the boiling water to cook the food product within the colander. The number of rotations and intervals between rotation are a function of the type and amount of pasta within the colander.

Abstract: A GaN based three layer buffer on a sapphire substrate provides a template for growth of a high quality I GaN layer as a substitute substrate for growth of a Nitride based LED.

Abstract: A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium\gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.

Abstract: A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.