Abstract: Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
Type:
Grant
Filed:
April 10, 2009
Date of Patent:
May 10, 2011
Assignee:
Micron Technology, Inc.
Inventors:
Bhaskar Srinivasan, Vassil Antonov, John Smythe
Abstract: A charge pump in a memory device is activated to produce a programming voltage prior to data loading during a programming operation. During an initial programming cycle, first and second load voltages are charged from the charge pump. The first load is removed from the charge pump during a verify operation. The first load voltage is subsequently recharged by charge sharing from the second load voltage so that the charge pump is not initially necessary for recharging the first load voltage.
Abstract: The linear distance measurement apparatus comprises a non-driven, extendable/retractable arm mechanism that is mounted such that an arc movement of the arm describes a linear distance. A rotary sensor mechanism is coupled to the non-driven arm. The sensor measures the arc movement of the arm and translates the arc movement to the linear distance.