Abstract: A data processor and method includes a timer system for producing a first output compare signal when a counter value equals a compare value. A register alternatively produces a second output compare signal in response to having a given bit value written therein. Logic circuitry provides an output compare function in response to either the first or the second output compare signals.

Abstract: A process for forming a DRAM cell having a capacitor adjacent a field effect transistor (FET), wherein the FET fabrication area is protected from adverse effects of the capacitor formation. The process is misalignment tolerant and provides FETs with appreciably lower defects in the substrate beneath the FET. Additionally, the process eliminates the need to stop an etching operation on a thin capacitor dielectric layer.

Abstract: In a data processor adapted to perform operations upon operands of a given size, a bus controller is provided to communicate the operands with a storage device having a data port which may be a submultiple of the operand size. In response to a signal from the bus controller requesting the transfer of an operand of a particular size, the storage device provides a size signal indicating the size of the data port available to accommodate the requested transfer. Depending upon the size of the operand to be transferred and the size of the data port of the storage device, the bus controller may break the operand transfer cycle into several bus cycles in order to completely transfer the operand. In the process, the bus controller compensates for any address misalignment between the operand and the data port.

Abstract: An apparatus and method for redundant column substitution in a memory device with column redundancy. Rather than inhibiting normal column decoding and selecting in response to a defective column address, the present invention proceeds in parallel with normal column access and redundant column access. The I/O multiplexer receives both the normal and redundant data and, in response to an input from the redundant column decoder, selects the redundant data. Column access time is improved in the case of substituted redundant columns due to the lack of inhibiting the normal column select process. Redundant columns are located physically close to the I/O multiplexer to provide for shorter I/O lines and further improved access time for the redundant columns. Floating normal bit lines are avoided in this scheme since normal column selection is not inhibited.

Abstract: A four-state ROM cell is improved by providing a tapered potential gate area which allows for the effective gate width to be increased and the gate length to be decreased for each succeedingly higher gain state with a single program mask at the polysilicon gate deposition stage.

Abstract: A clocked buffer circuit is provided which uses a self-bootstrapping transistor to provide a full power supply output signal in response to an input signal and a full power supply clock signal. The self-bootstrapping transistor is disabled by a delay circuit prior to the removal of the clock signal so that the output signal is still provided after the removal of the clock signal. That the output signal reaches full power supply is ensured because the disabling effect of the delay circuit is triggered by the output signal itself.