Abstract: A method for identifying metal layer thickness of an inspection sample according to one embodiment utilizes an eddy current probe to obtain initial resistance and reactance measurements from the inspection sample. Once these measurements have been obtained, the relative distance between the eddy current probe and inspection sample is increased and terminating resistance and reactance measurements are obtained. An inspection sample intersecting line may then be calculated using the initial and terminating resistance and reactance measurements. An intersecting point between a natural intercepting curve and the inspection sample intersecting line may also be determined. A reactance voltage of the intersecting point along a digital calibration curve is calculated to identify a closest two of a plurality of calibration samples. The metal layer thickness of the inspection sample may then be calculated by performing an interpolation between the identified closest two calibration samples.

Abstract: A method and system for identifying thicknesses of inspection samples, such as semiconductor wafers is presented. The method and system includes a probe housing, comprising an eddy current sense coil and a linear motion controller, and a computer that controls the linear motion controller and the eddy current sense coil. The computer may be configured to identify a thickness of the inspection sample by a method comprising the generation of a natural intercepting curve based on resistance and reactance measurements of at least two data points. Then, a plurality of corresponding resistance and reactance measurements of a location on the inspection sample is obtained with the eddy current sensor, where the eddy current sensor makes a first measurement at a first distance from the inspection sample, and makes each of the remaining plurality of measurements at a distance that is incrementally further away from the inspection surface.