Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure and a sacrificial spacer layer is deposited in the trench. The waveguide is then created in the trench on the sacrificial spacer layer. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.
Type:
Grant
Filed:
June 7, 2006
Date of Patent:
October 6, 2009
Assignee:
The United States of America as represented by Director, National Security Agency
Inventors:
John L. Fitz, Daniel S. Hinkel, Scott C. Horst