Abstract: This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
Type:
Grant
Filed:
October 7, 2004
Date of Patent:
August 28, 2007
Assignee:
Hewlett-Packard Development Company, L.P.
Inventors:
Chien-Hua Chen, Zhizhang Chen, Neal W. Meyer