Abstract: Polymeric metal complexes were prepared by coordination reactions of 2,5-diamino-1,4-benzenedithiol (DADT) with divalent metal halides (cobalt chloride, iron chloride, copper chloride and nickel chloride) in an aqueous alkaline solution at reflux temperatures. A black precipitate which conducted electricity was formed. Resistivity of the material increased upon exposure to air but decreased when oxygen was removed from the material.

Abstract: A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP semiconductor devices.