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  • Method of manufacturing selective emitter solar cell
    Patent number: 8288193
    Abstract: The present disclosure uses ammonia plasma for nitrification and for further forming a barrier pattern on a substrate. Then, a selective emitter is fabricated by forming light doping and heavy doping at one time through diffusion into the substrate. Therein, a plurality of trenches for obtaining a front contact is formed at the same time on forming the barrier pattern. Thus, the fabrication process is simplified and the cost is reduced for fabricating a selective emitter solar cell.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: October 16, 2012
    Assignee: National Tsing Hua University
    Inventors: Yung-Hsien Wu, Li-Karn Wang, Feng-Der Chin