Abstract: A method is provided for etching quaternary interface layers of InxGa1−xAsyP1−y which are formed between layers of GaAs and InGaP in heterojunction bipolar transistors (HBTs). In accordance with the method, the interface is exposed by etching the GaAs layer with an etchant that is selective to InGaP. The interface is then etched with a dilute aqueous solution of HCl and H2O2 that is selective to InGaP. The controlled etching provided by this methodology allows HBTs to be manufactured with more sophisticated, near ideal designs which may contain multiple GaAs/InGaP interfaces.

Abstract: A solder flux composition (19) is provided which comprises active ingredients and a carrier. The solder flux composition undergoes a phase separation during solder reflow to form at least a first phase (21) and a second phase (23), such that the active ingredients are disposed primarily in the first phase and the carrier is disposed primarily in the second phase. The use of this solder flux composition is found to reduce solder migration, during solder reflow, that can result in bridging in ball grid arrays and other such devices.

Abstract: A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

Abstract: A semiconductor device (51) is provided. The device (51) comprises a die (53) having a contact pad (61) thereon, a redistribution conductor (59) having a base portion (64) which is in electrical communication with the contact pad (61) and a laterally extending portion (63), a bumped contact (65) which is in electrical communication with the redistribution conductor (59), and a passivation layer (57) disposed between the laterally extending portion (63) of the redistribution conductor (59) and the die (53). Preferably, the redistribution conductor (59) is convoluted and is adapted to peel or delaminate from the passivation layer (57) under sufficient stress so that it can shift relative to the passivation layer (57) and base portion (64) to relieve mechanical stress between substrate (69) and the die (53). Bump and coiled redistribution conductor (59) accommodating small CTE mis-match strain without failure allows DCA flip-chip to be reliable without underfill or additional assembly process.

Abstract: A method for plating solder is provided. In accordance with the method, a die having a seed metallization thereon is provided. The seed metallization is microetched (85) with a solution comprising an acid and an oxidizer, thereby forming an etched seed metallization. An under bump metallization (UBM) is then electroplated (87) onto the etched seed metallization, and a lead-free solder composition, such as SnCu, is electroplated (91) onto the UBM. A method for reflowing solder is also provided, which may be used in conjunction with the method for plating solder. In accordance with this later method, the substrate is subjected to a seed metallization etch (137), followed by a microetch (141). A solder flux is then dispensed onto the substrate (147) and the solder is reflowed (149).

Abstract: A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.

Abstract: A method for creating a MEMS structure (100) is provided. In accordance with the method, an article is provided comprising a substrate (101), a sacrificial layer (103) and a semiconductor layer (105), wherein the sacrificial layer comprises a first material such as silicon oxide. A MEMS structure is then formed in the semiconductor layer. The structure has first (107) and second (109) elements which have an exposed portion of the sacrificial layer (103) disposed between them. The first element is then released from the substrate (101) by contacting the exposed portion of the sacrificial layer (103) with a first etchant, typically by way of one or more trenches (119), after which the first element is reattached to the substrate (101) with a second material (131). The first element is then released from the substrate (101) by contacting the second material (131) with a second etchant.

Abstract: An optical film is provided which comprises a disperse phase of polymeric particles disposed within a continuous birefringent matrix in combination with light directing materials to enable control of light emitted from a lighting fixture or display. The film is oriented, typically by stretching, in one or more directions. The size and shape of the disperse phase particles, the volume fraction of the disperse phase, the film thickness, and the amount of orientation are chosen to attain a desired degree of diffuse reflection and total transmission of electromagnetic radiation of a desired wavelength in the resulting film, and the light directing materials are chosen to control the direction of polarized light reflected from or transmitted by the optical film.

Abstract: A compound semiconductor structure is provided, which includes a GaAs-based supporting semiconductor structure having a surface on which a dielectric material is to be formed. A first layer of gallium oxide is located on the surface of the supporting semiconductor structure to form an interface therewith. A second layer of a Ga—Gd oxide is disposed on the first layer. The GaAs-based supporting semiconductor structure may be a GaAs-based heterostructure such as an at least partially completed semiconductor device (e.g., a metal-oxide field effect transistor, a heterojunction bipolar transistor, or a semiconductor laser). In this manner a dielectric layer structure is provided which has both a low defect density at the oxide-GaAs interface and a low oxide leakage current density because the dielectric structure is formed from a layer of Ga2O3 followed by a layer of Ga—Gd-oxide.

Abstract: A RESURF super-junction device (51) is provided which comprises a plurality of electrodes (53) disposed in a layer of a first material (61) having a first conductivity type. Each of the plurality of electrodes contains a second material (57) of a second conductivity type which is encased in a dielectric material (55).

Abstract: A method for attaching a die (11) to a substrate (15) is provided. In accordance with the method, a die and a substrate are provided which are to be connected to each other across first and second surfaces. The first and second surfaces are contacted with a liquid solder composition (21) having a maximum melting temperature Tm1, of less than about 100 C. The liquid solder composition is contacted with a freezing agent (17 or 19) such that a second composition is formed which has a maximum melting temperature Tm2, wherein T2−Tm1 is at least about 25° C.

Abstract: An improved optical film having a continuous/disperse phase morphology and a method for making the same is provided. At least one of the continuous and disperse phases comprises a blend of homopolymers which are inter-reacted, as by transesterification. The resulting films exhibit a higher degree of birefringence for a given level of strain than analogous films in which the blend is replaced by a random copolymer.

Abstract: An improved optical film having a continuous/disperse phase morphology and a method for making the same is provided. At least one of the continuous and disperse phases comprises a blend of homopolymers which are inter-reacted, as by transesterification. The resulting films exhibit a higher degree of birefringence for a given level of strain than analogous films in which the blend is replaced by a random copolymer.

Abstract: An improved optical film having a continuous/disperse phase morphology and a method for making the same is provided. At least one of the continuous and disperse phases comprises a blend of homopolymers which are inter-reacted, as by transesterification. The resulting films exhibit a higher degree of birefringence for a given level of strain than analogous films in which the blend is replaced by a random copolymer.

Abstract: A novel release liner is provided which has a release surface comprising a syndiotactic polymer. The release liners of the present invention offer superior release to a wide variety of materials without the application of release agents, have relatively high heat distortion temperatures, and are unaffected by radiation sources used to cure most polymeric compositions. The release liners of the present invention can be microreplicated with a pattern which can be transferred to coatings and other impressionable materials to impart unique physical or optical properties. Thus, a method of producing a patterned article is also provided, as is a method of producing a solid object from a curable composition.

Abstract: An optical film is provided which comprises a disperse phase of polymeric particles disposed within a continuous birefringent matrix. The film is oriented, typically by stretching, in one or more directions. The size and shape of the disperse phase particles, the volume fraction of the disperse phase, the film thickness, and the amount of orientation are chosen to attain a desired degree of diffuse reflection and total transmission of electromagnetic radiation of a desired wavelength in the resulting film.

Abstract: A method for determining compliance with design specifications is provided. In accordance with the method, a product is provided which is characterized by k parameters, k≧2, wherein, for n=1 to k, the nth parameter has a design specification PnDesign and an actual value of PnActual, and wherein dn=PnDesign−PnActual. The value of Δ Actual = [ ∑ n = 1 k ⁢   ⁢ d n 2 ] 1 / 2 is then determined. If &Dgr;Actual≦&Dgr;Design, where &Dgr;Design is the total design tolerance for the product, then the product is deemed to comply with design specifications.

Abstract: A high solids spin finish composition is provided that can be readily applied to synthetic fibers during the fiber-making process. The spin finish composition comprises a hydrocarbon surfactant and a fluorochemical emulsion.

Abstract: 1H,lH-perfluorocyclohexylmethyl 2-fluoroacrylate, and homopolymers thereof.

Abstract: A novel release liner is provided which has a release surface comprising a syndiotactic polymer. The release liners of the present invention offer superior release to a wide variety of materials without the application of release agents, have relatively high heat distortion temperatures, and are unaffected by radiation sources used to cure most polymeric compositions. The release liners of the present invention can be microreplicated with a pattern which can be transferred to coatings and other impressionable materials to impart unique physical or optical properties. Thus, a method of producing a patterned article is also provided, as is a method of producing a solid object from a curable composition.