Abstract: A method is disclosed for controlling the polymerization process of olefinic hydrocarbons in an inert solvent which provides continuous control of Mooney viscosity and molecular weight distribution of the obtained polymer. In the disclosed method, means (4, 5) are included for measuring the temperature of a polymer solution in different parts of a reactor (1) provided with agitation (2), as well as means (6) for measuring the dynamic or kinematic viscosity of the polymer solution and means (7) for measuring the polymer concentration in the solution. A valve (8) mounted on the catalyst feed line controls the catalyst flow rate. A computer (9) is used to control the entire process by calculating the Mooney viscosity from the dynamic viscosity and polymer concentration and adjusting the process parameters as necessary to achieve a pre-set Mooney viscosity.

Abstract: Biaxially oriented, partially crystalline polycarbonate carbonate films have improved properties. For instance, a 2 .mu.m film that has a degree of crystallinity of about 35% has an electrical breakdown strength of about 13.5 kv per mil. Such a film has a stretch ratio in the transverse direction of about 2.27/1 and in the machine direction of about 3.77/1.

Abstract: Compositions for cryopreservation of phosphoglyceride-containing biological and synthetic membranes are provided in which a lipophilic anchor molecule is modified by the attachment of a preferably carbohydrate moiety placed at a predetermined, variable distance from the hydrophobic portion of the molecule by means of a hydrophilic linker unit. A method for the use of the compositions is also provided.

Abstract: A convertible toy in which a device of one appearance can be change to a substantially different appearance. For example, from an apparently innocuous-looking device, such as a computer or a trash can, a figurine can be rotated up through a space left by a receding part in the top so that the figurine may appear to visually observe the surroundings.

Abstract: A method for producing a large high-quality single crystal of Cadmium-Indium-Telluride is disclosed wherein a stoichiometric crystal is produced from a non-stoichiometric melt composition. An initial melt composition corresponding to approximately 62 mole % to 90 mole % In.sub.2 Te.sub.3 and 38 mole % to 10 mole % CdTe, respectively, is prepared and sealed in an evacuated ampoule and then heated to completely melt the mixture. Growth of a single crystal of CdIn.sub.2 Te.sub.4 is initiated and maintained from the non-stoichiometric melt mixture by lowering the melt through its corresponding phase-equilibrium melting point. Upon cooling to room temperature, the large single crystal so produced is removed from the ampoule.

Abstract: A process is disclosed for the removal of water and water derived impurities, e.g. OH.sup.-, substitutionally or interstitially incorporated in the structure of crystalline and amorphous materials, more specifically, in metal oxides, e.g. fused silica or aluminum oxide, wherein the material is exposed in powdered form to a gaseous mixture of halogen and carbon monoxide at a predetermined elevated temperature. The mixture of halogen and carbon monoxide reacts to cause the water and OH.sup.- ion concentration in the processed material to be reduced to an extremely low level. Materials purified by the process can be used to produce optical fibers and laser windows of excellent mechanical, thermal and optical properties.

Abstract: A substrate having a diffraction grating of a first periodicity formed thereon, a mask having a diffraction grating of a second periodicity formed thereon, the mask and substrate being positioned such that the respective mask and substrate gratings are generally parallel opposing one another on the mask and substrate, means for providing collimated coherent light directed so as to impinge on the mask and substrate gratings, and means for separately collecting, recombining, and detecting the intensity of at least a first given order of diffracted light beams as respectively diffracted by the mask and substrate gratings.

Abstract: This invention provides a process, and delineates typical materials to be used in that process, which enables the use of a precision radiation source to produce a microcircuit resist image accurate to a few micrometers or even fractions of a micrometer. In addition, the process of the invention provides for the dry development of this image, thus insuring the ability to create a finished resist structure exhibiting the same accuracy in dimensions.Specifically, the invention provides a process in which a positive or negative resist polymer is irradiated under low pressure using a precision radiation source such as an electron beam, masked ion beam, or focused ion beam to generate organic free radicals. After irradiation, the reactive resist polymer is exposed to oxygen or air to create peroxides or hydroperoxides.

Abstract: A high speed photoconductive detector is disclosed which comprises two interdigital electrically conducting electrodes formed on a photoconductive layer. The device speed and sensitivity are improved by using a double-heterostructure configuration comprising an active layer formed on an isolation layer in turn formed on a supporting substrate. A passivation layer is formed on the active layer. This configuration confines the generated carriers to the active layer. Consequently, current will be induced under optical illumination due to photo-carrier generation. This interdigitated geometry allows for a large device cross-section and small carrier transit distance.

Abstract: Disclosed is a multilayer electro-optical material having a plurality of adjacent, single crystals wherein each crystal layer has different electrical and optical properties from its adjacent layer or layers. This material is made by a method wherein the successive layers are epitaxially grown from a molten solution of said electro-optical material optionally containing at least one dopant. In one embodiment, such electro-optic material comprises silver thiogallate, wherein successive epitaxial layers are grown from a molten solution of silver thiogallate and potassium chloride, and which optionally includes at least one dopant. This molten solution exhibits the characteristic that, for any specific solution composition, layers having different electrical and optical properties can be obtained by cooling over the temperature range which will yield crystal growth of the composition corresponding to the desired electrical and optical properties.

Abstract: The invention is directed to a process for preparation of a negative resist configuration on a siliceous substrate.A negative resist polymer is bonded to the siliceous substrate using an intermediary interlayer of silane between the substrate and the resist polymer. The silane is applied to the siliceous substrate and the silane-coated surface is heated to accomplish bonding; the resist polymer is then applied as an overlay on the silane-coated surface and the resist polymer surface is irradiated to form an image therein and simultaneously to bond the resist polymer image to the silane-coated surface.

Abstract: An improvement of the method for preparing cupric ion-free cuprous chloride powder in which copper metal is added to a highly acidified solution of cupric chloride to reduce the cupric ions to cuprous ions and oxidize the copper metal to cuprous ions. The improvement involves applying an electromotive force to the solution by immersing interconnected copper and platinum electrodes in the solution. The electromotive force is applied only after the reduction of cupric ions is near completion. The electromotive force is applied for a sufficient time to insure essentially complete reduction of cupric ions in the solution. Cuprous chloride is then separated from the cupric ion-free solution by evaporation and isolated by conventional techniques to provide an improved cuprous chloride powder product which is essentially free of cupric ions. The electromotive force is also applied during the evaporation of the acidified solution to prevent possible cupric ion formation.

Abstract: A method for preparing ultra-pure metal tetrafluorides in which 3d such as Fe impurities are separated from impure material by a combined vaporization-electrolytic separation procedure. Sublimation and distillation methods are disclosed in combination with electrolytic separation by both emf-series displacement (ESD) and direct melt electrolysis (DME).

Abstract: A thin conducting line such as a gate pattern is defined on a semiconductor chip (10) by applying a narrow ion beam, suitably a focused-ion-beam (16) having a submicrometer thickness from a source (18) onto a thin layer (14) of an inorganic material such as silicon or aluminum overlying a layer (12) of refractory metal on a substrate (11). The ion beam is translated to form a gate pattern at a dose between about 0.1 to 50.times.10.sup.15 cm.sup.-2 and an energy from about 1 to 1000 KeV. Ions are implanted into the silicon and aluminum layers and into the underlying portions of the refractory metal layer and to render the exposed portions of the layers preferentially resistant to wet-etchant. The portions of layers which are not exposed nor protected by layers which are exposed, are preferentially removed to form a gate. Conventional MOSFET or MESFET processing to implant ions to form source and drain regions may then be performed.

Abstract: A nickel-hydrogen bipolar battery comprises a plurality of unit cells organized in assemblies wherein the assemblies are stacked and positioned within a hydrogen space. Each unit cell includes a porous hydrogen electrode loaded on its lower surface with a platinum catalyst layer. Adjacent the platinum loaded lower surface of the porous hydrogen electrode lies a separator. A nickel electrode lies against the separator opposite the surface adjacent to the platinum loaded surface. One or more openings through the nickel electrode and separator cooperate to permit oxygen gas, generated at the nickel electrode, to reach to the hydrogen electrode of the same unit cell. Recombination of hydrogen gas and oxygen gas occurs at the hydrogen electrode platinum catalyst layer. The assembly provides serial connection of the unit cells through conductive end plates for axial current flow through the assembly stack.

Abstract: Electron or ion beam shaping apparatus has first aperture (28) and second aperture (30) through which the beam (20) is focused by first lens (24). Double deflection apparatus of either electromagnetic or electrostatic character is small and can be positioned between the aperture plates so that the image of both apertures can be focused on the target (16). Double deflection serves to vary spot size and shape and assures that target current density does not change while spot size is varied.

Abstract: Two lens focused ion beam column (10) has an accelerating lens (20) which carries a potential to focus an image of the liquid metal ion source (14) on the mass analyzer slit (26) with a magnification of about unity. Munro lens (36) accelerates the beam of selected ion species and demagnifies the image through a long working distance to provide an ion writing spot of less than about 1000 .ANG. size.

Abstract: A method of making a thin, high purity single crystal layer of silver thiogallate. According to the preferred embodiment of this method, a seed crystal substrate of silver thiogallate is dipped into a molten solution of silver thiogallate dissolved in potassium chloride. Upon slowly cooling the solution, the thin layer of single crystal silver thiogallate forms on the substrate. Upon removal, very little of the potassium chloride adheres to the surface, and what does adhere to the surface can be easily removed by washing the surface with hot water.

Abstract: A method of growing a single crystal layer of silver thiogallate having a maximum thickness of 50 micrometers. This crystal is of a high purity having a higher degree of crystalline perfection than the substrate on which it is grown. The crystal is grown epitaxially from a solution of silver thiogallate in a solvent of either antimony sulfide or lead sulfide. The solution is prepared by heating a mixture of the materials (solid silver thiogallate in molten solvent) slowly at a rate of, for example, 3.degree. to 5.degree. C. per minute until the mixture reaches a temperature about 10.degree. C. above the liquidus, and maintaining this temperature for 16 hours or more. The above referenced solution is then gradually cooled at a rate of, for example, 1.degree. C. per minute to the temperature at which crystal growth is to be initiated. At this temperature a polished single crystal substrate of a material which has an appropriate lattice relationship with silver thiogallate is dipped into the molten solution.

Abstract: This invention is directed to liquid crystal mixtures which have an extended operating range and require a low operating voltage. They are white in color and stable to atmospheric oxygen, moisture, and light. Because of their superior properties, they are useful in electro-optical displays, especially in liquid crystal watches and pocket-size calculators.