Patents Represented by Attorney John C. Lindgren
  • Patent number: 5576633
    Abstract: A circuit for selecting a block spare in a semiconductor device is designed with a programmable circuit (14), storing an internal address and producing an address match signal AM and a block select signal BS in response to first (A) and second (B) address signals and the internal address. A global spare circuit (28) produces a global spare select signal (GSS), in response to the address match signal. A block spare circuit (34) produces a block spare select signal (BSS), in response to the global spare select signal and the block select signal.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: November 19, 1996
    Assignee: Texas Instruments Incorporated
    Inventors: Robert N. Rountree, Dan Cline, Darryl G. Walker, Francis Hii, David W. Bergman
  • Patent number: 5434438
    Abstract: An N-channel MOS random access memory of the one transistor type is disclosed. The cell utilizes an ion implanted area beneath the capacitor dielectric to permit lower bias voltages on the capacitor. In one example, two levels of polycrystalline silicon are used, one for the bias voltage side of the storage capacitor, and the other for the gate of the MOS transistor and to connect the gate to the bit select line. The capacitor dielectric may be formed of thermal SiO.sub.2 which is about half as thick as the gate insulator of the MOS transistor in the cell. In another example, a single-level poly cell uses an implanted region for the same purpose; the capacitor dielectric is the same thickness as the MOS gate insulator so the lower bias voltage functions to reduce stress failures of the dielectric.
    Type: Grant
    Filed: May 23, 1994
    Date of Patent: July 18, 1995
    Assignee: Texas Instruments Inc.
    Inventor: Chang-Kiang Kuo