Patents Represented by Attorney John D. Morgan & Finnegan, LLP Flynn
  • Patent number: 6031394
    Abstract: A low voltage CMOS circuit and method provide output current ability meeting multimode requirements of high voltage off-chip drivers while protecting the CMOS devices from various breakdown mechanisms. The circuit and method utilize intermediate voltages between two power rails and voltage division techniques to limit the voltages to acceptable limits for drain-to-source, gate-to-drain, and gate-to-source of CMOS devices in any chosen technology. The circuit comprises first and second CMOS cascode chains connected between a high voltage power rail, e.g 5 volt and a reference potential power rail, e.g. ground. Each CMOS cascode chain comprises first and second p-type MOS devices in series with first and second n-type MOS devices. An input circuit is coupled to a node at the midpoint of the first CMOS cascode chain. A bias voltage, typically 3.3 volts is connected to the NMOS devices in the first and CMOS cascode chains.
    Type: Grant
    Filed: January 8, 1998
    Date of Patent: February 29, 2000
    Assignee: International Business Machines Corporation
    Inventors: Hayden C. Cranford, Jr., Stacy J. Garvin, Geoffrey B. Stephens