Abstract: There is provided a secondary reactive termination circuit connected between the output of the RF power generator and the input of the plasma chamber to allow the tight regulation or limiting of the voltage and current components of the secondary frequencies within the process plasma. The secondary reactive circuit controls the impedance of the match network designed primarily to operate at the fundamental frequency of the RF power generator as seen by secondary frequencies in the system. Power delivery components are measured at the connection point of the termination circuit and used as feedback signals to control variable values of the termination circuit components.

Abstract: A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

Abstract: An electromagnetic device such as a power transformer comprises at least two tubular magnetic core sections spaced apart in substantially parallel alignment. The windings of the device are substantially disposed within each tubular magnetic core. The outer surfaces of the magnetic core sections are essentially unobstructed and available for contact with heat extraction elements. The core sections may be elongated relative to their cross-sectional dimensions in order to increase the cooling surface area. The device configuration accommodates a means of providing for selected values of leakage inductance using opposing projections extending inward from the tubular side walls of the cores. The configuration also accommodates a means of actively adjusting the leakage inductance of the device.