Patents Represented by Attorney John G. Gramham

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  • Semiconductor memory cell with clocked voltage supply from data lines
    Patent number: 4209851
    Abstract: An MOS memory cell of the static type employs a pair of cross-coupled driver transistors forming a bistable circuit, with load resistors replaced by a pair of series coupling transistors connecting storage nodes to complementary precharged data lines. The coupling transistors are turned on in sequence, for refresh, so an intermediate node is charged during a first phase and discharged into the storage nodes during the second phase. Both transistors are turned on at the same time for read or write operations.
    Type: Grant
    Filed: July 19, 1978
    Date of Patent: June 24, 1980
    Assignee: Texas Instruments Incorporated
    Inventor: James E. Ponder