Patents Represented by Attorney John J. Karssek

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  • Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
    Patent number: 7198970
    Abstract: This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
    Type: Grant
    Filed: January 23, 2004
    Date of Patent: April 3, 2007
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Martin Peckerar, Richard Henry, Daniel Koleske, Alma Wickenden, Charles R. Eddy, Jr., Ronald Holm, Mark E. Twigg