Patents Represented by Attorney John M. Bronk
  • Patent number: 7498662
    Abstract: Briefly, the present invention provides an electronic device, typically a transistor or a capacitor, comprising at least one electrically conductive electrode and, adjacent to the electrode, a dielectric layer; wherein the dielectric layer comprises a polymeric matrix and, dispersed in the polymeric matrix, metal oxide particles; wherein the metal oxide particles have organic functional groups covalently bound to their surface, and wherein the organic functional groups are not covalently bound to the polymeric matrix. In another aspect, the present invention provides a printable dispersion, typically a jet-printable dispersion, comprising: a) a curable composition and b) metal oxide particles; wherein the metal oxide particles have organic functional groups covalently bound to their surface, and wherein the organic functional groups are not covalently bound to any part of the curable composition.
    Type: Grant
    Filed: November 18, 2005
    Date of Patent: March 3, 2009
    Assignee: 3M Innovative Properties Company
    Inventor: Mark E. Napierala
  • Patent number: 7160583
    Abstract: A method of selectively and electrolessly depositing a metal onto a substrate having a metallic microstructured surface is disclosed. The method includes forming a self-assembled monolayer on the metallic microstructured surface, exposing the self-assembled monolayer to an electroless plating solution including a soluble form of a deposit metal, and depositing electrolessly the deposit metal selectively on the metallic microstructured surface. Articles formed from this method are also disclosed.
    Type: Grant
    Filed: December 3, 2004
    Date of Patent: January 9, 2007
    Assignee: 3M Innovative Properties Company
    Inventors: Matthew H. Frey, Khanh P. Nguyen
  • Patent number: 7151276
    Abstract: Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an ?,?-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an ?,?-bis(2-perfluoroether acyl oligothiophene compound.
    Type: Grant
    Filed: March 9, 2005
    Date of Patent: December 19, 2006
    Assignee: 3M Innovative Properties Company
    Inventors: Christopher P. Gerlach, David A. Ender, Dennis E. Vogel